The main aim of this investigation is to assess the suitability of modern power semiconductor devices for pulse power applications. Pulse power system involves the storage of energy, which is released in form of high power pulse to the load by means of a switching device. Hence the basic components of pulse power system are an energy storage element, a switch, and a load circuit. The energy sto...

Organic field-effect transistors have received much attention in the area of low cost, large area, flexible, and printable electronic devices. Lots of efforts have been devoted to achieve comparable device performance with high charge carrier mobility and good air stability. Meanwhile, in order to reduce the fabrication costs, simple fabrication conditions such as the printing techniques have b...

• Demonstration of an enhancement in the modulation bandwidth from 16 GHz to 28 GHz in an injection locked semiconductor laser with a coincident reduction in parasitic chirp. • Demonstration of room-temperature, continuous-wave operation of the first bipolar cascade laser. This laser demonstrated an internal efficiency of 150% and a measured external modulation efficiency of 99.3%. Continuous-w...

One-dimensional nanowires (NWs) are promising materials for future nanodevices owing to their small dimensions and novel properties. After ten years of materials optimization [1], it is now possible with the help of X-rays and synchrotron radiation to draw some preliminary conclusions about the structural requirements necessary to tune the physical properties of demanding devices in terms of st...

Device simulation has two main purposes: to understand and to depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of the next device generation. Towards these goals, the quality of the implemented physical models is decisive, forcing heuristic t models to be replaced by \\rst-principle"-based models. Since transport schemes using moments o...

This paper presents a comprehensive review of diamond electronics from the RF perspective. Our aim was to find and present the potential, limitations and current status of diamond semiconductor devices as well as to investigate its suitability for RF device applications. While doing this, we briefly analysed the physics and chemistry of CVD diamond process for a better understanding of the reas...

Designing high-performance semiconductor devices is a complex optimization problem, which is characterized by multiple and, often, conflicting objectives. In this research work, we introduce a multi-objective optimization design approach based on the Bi-Objective Mesh Adaptive Direct Search ( BiMADS) algorithm. First, we assess the performance of the algorithm on the design of a n+ − n− n+ sili...

The development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivity and three-dimensional spatial resolution of APT makes it uniquely capable of addressing challenges resulting from the continued shrinking of sem...

We present results from a three-dimensional device simulator, using adaptive meshing and solving the drift-diffusion equations. The adaption algorithm and the criteria used for adap-tion are discussed. Three devices of industrial interest are presented: a bipolar transistor, a 1.25/zm n-MOS device and a CCD, illustrating the range of devices which may be successfully simulated.