Semiconductor nanowire photoelectrochemical cells have attracted extensive attention in the light-conversion field owing to the low-cost preparation, excellent optical absorption, and short distance of carrier collection. Although there are numbers of experimental investigations to improve the device performance, the understanding of the detailed process of photoelectric conversion needs to be ...

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhan...

We will summarize here some of our measurements of the superconducting fluctuations effects on the in-plane electrical resistivity (the so-called in-plane paraconductivity) in La2−xSrxCuO4 thin films with different Sr content. Our results suggest that these superconducting fluctuations effects are not related to the opening of a pseudogap in the normal-state of underdoped compounds.

Understanding doping in polymer semiconductors has important implications for the development of organic electronic devices. This study reports a detailed investigation poly(3-hexylthiophene) (P3HT)/Nafion bilayer interfaces commonly used biosensors. A combination UV–visible spectroscopy, dynamic secondary ion mass spectrometry (d-SIMS), mechanical thermal analysis, and electrical device charac...

A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....