A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to ...

Methane oxidation was investigated in a nanosecond repetitively pulsed dielectric barrier discharge. Quantitative measurements of temperature and product species were performed using tunable diode laser absorption spectroscopy and gas chromatograph sampling. Discrepancies with modelling work revealed uncertainties in the low temperature oxidation reactions, particularly for methyl radical oxida...

This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400◦C. Although the conduction loss of the SiC JFET increases slightly with increasing temperature...

Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in th...

Silicon carbide (SiC) has long been shown to be one of the most promising materials for high-voltage power semiconductor devices. New device technologies and products have lead to an ever increasing size and variety of the markets addressed by SiC. The specific material properties and the new applications served by SiC devices give rise to specific reliability requirements, reaching beyond the ...

The paper concerns the problem of modelling d.c. characteristics of commercial SiC power Schottky diodes with self-heating taken into account. The electrothermal model of the investigated devices is proposed and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of selected SiC power Schottky di...

This paper explores the temperature dependent h terojunction beh vi r of n-type zinc oxide (ZnO) nanowires/pSi diodes. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported. From the detailed electrical properties, it is confirmed that the fabricated p–n diode showed a good stability over the temperature range of 25–130 C. The tur...

Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. ...

106204-9494 IJECS-IJENS © August 2010 IJENS I J E N S  Abstract— Superlattice emitter resonant tunneling bipolar transistor (SE-RTBT) is facing problem due to thermal transfer of electrons over barrier which causes diminishing negative differential resistance (NDR) effect. Therefore resonant tunneling diode (RTD) with higher quasibound state energy causes transfer of electrons by RT effect ins...