A SI1\IPLE METHOD FOR STAINING non-hemoglobin irOn within erythrocytes aIld their precursors and within macrophages and other cells containing particulate iron has been itl use in our laboratories since 1951 . This method has made possible rapid estimates of the amount of non-hemoglobin iron ill the marrow and in the blood in both new and old films of marrow or blood as well as in both newT and...

J. H. Pixley,1 Stefan Kirchner,2,3 Kevin Ingersent,4 and Qimiao Si1 1Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA 2Max Planck Institute for the Physics of Complex Systems, 01187 Dresden, Germany 3Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany 4Department of Physics, University of Florida, Gainesville, Florida 32611-8440, USA (Recei...

The equilibrium geometries, phonon spectra, electronic structures and optical properties of the Ci Oi defect in bulk Si and Si1−x Gex systems are calculated using the ab initio plane wave density-functional method. We find that in a Gedoped Si crystal it is more energetically favourable for the defect to stabilize in a configuration with no Ge atoms in the first sphere. Our calculations show th...

Hall Effect measurement was employed to study the isothermal annealing of boron or phosphorus implanted polycrystalline Si1-xGex thin films, with x varying from 0.3 to 0.55. Xray diffraction and cross-sectional transmission electron microscopy were used to study the crystal structure, while X-ray photoelectron spectroscopy was used to determine the film composition and the chemical bonding stat...

Theorem. There exist no C Levi-flat real hypersurfaces in CP . This improves an earlier result of Siu [Si2] where C smoothness is required. For the nonexistence of Levi-flat hypersurfaces in CP with n ≥ 3, Lins-Neto [LN] first proved the nonexistence of real-analytic hypersurfaces in CP. Nonexistence of C Levi-flat hypersurfaces in CP was proved for n ≥ 3 by Siu [Si1]. It is proved in a recent ...

Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1−xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2 MeV proton irradiation with a 1.6 1015 cm−2 fluence was used to produce saturated posit...

We show that the equation si1 + si2 + · · ·+ sid = sid+1 + · · ·+ si2d has O N2d−2+2 −d+1 solutions for any strictly convex sequence {si}i=1 without any additional arithmetic assumptions. The proof is based on weighted incidence theory and an inductive procedure which allows us to effectively deal with higher dimensional interactions. The terminology ”combinatorial complexity” is borrowed from ...

Thin films of Si nanocrystals (Si NCs) embedded in a silicon carbide (SiC) matrix (Si-NC:SiC) were prepared by alternating deposition of Si-rich silicon carbide (Si1 xCx) and near-stoichiometric SiC mutilayers (Si1 xCx/SiC) using magnetron cosputtering followed by a post-deposition anneal. Transmission electron microscopy and Raman spectroscopy revealed that the Si NCs were clearly established,...