This brief presents a new, simple method of measuring the generation lifetime in silicon-on-insulator (SOI )MOSFET’s. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across finished Separation by IMplantation of OXygen (SIMOX) wafers and Bonded and Etchedback SOI (BESOI) wafers. BESOI material evaluate...

In the current study, monocrystalline silicon nanowire arrays (SiNWs) were prepared through a metal-assisted chemical etching method of silicon wafers in an etching solution composed of HF and H2O2. Photoelectric properties of the monocrystalline SiNWs are improved greatly with the formation of the nanostructure on the silicon wafers. By controlling the hydrogen peroxide concentration in the et...

Silicon wafers with micro-machined holes were evaluated for use as low-permeation-rate standard artifacts. Accuracy, stability, and reliability were assessed. Two independent experimental techniques for evaluating permeation were used: chilled mirror hygrometer and mass loss. The wafers exhibited a well-defined linear relationship between hole area and resultant water partial pressure for both ...

Bonded silicon-on-insulator (SOI) wafers have the capability of realizing monolithic pixel devices, where the silicon resistivity is optimized separately for the electronics and detector parts. Using UNIBOND wafers, we are developing monolithic pixel devices fabricated with OKI Semiconductor 0.20 mm FD-SOI technology. A set of PMOS and NMOS transistors were irradiated with protons in order to i...

We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of...

A laser technology for fabricating microelectromechanical components has been developed. Using a Q-switched Nd:YAG laser with optional frequency doubling, bulk silicon wafers, silicon membranes, and thin-films deposited on different substrates are micromachined without using lithography-based technologies. Applications are for example rapid prototyping or small lot production of micromechanical...

A straightforward metal-particle-induced, highly localized site-specific corrosion-like mechanism was proposed for the formation of aligned silicon-nanowire arrays on silicon in aqueous HF/AgNO3 solution on the basis of convincing experimental results. The etching process features weak dependence on the doping of the silicon wafers and, thus, provides an efficient method to prepare silicon nano...

Silicon nano-wires were fabricated using thin Silicon on Insulator (SOI) wafers and a combination of anisotropic wet etching by TetraMethyl Ammonium Hydroxide (TMAH) and Local Oxidation of Silicon (LOCOS). These nano-wires were submitted to laser exposure using gas immersion laser doping (GILD). The result was the formation of either periodic nano-structures or silicon balls. Since the process ...

We calculate the second-order streaming force in a fluid in the vicinity of the solid/fluid interface for two systems of importance in the technology of megasonic cleaning of silicon wafers. The first system consists of a single planar interface between a solid elastic medium representing silicon and a viscous fluid, namely water. The second system accounts for the finite thickness of silicon w...

Silicon nanowire sensors are fabricated from the active silicon layer of silicon-on-insulator (SOI) wafers and used for label-free sensing of specific proteins. A fabrication method is demonstrated which avoids the integration difficulties inherent in a bottom-up approach, without the drastic decrease in carrier mobility usually associated with reactiveion-etched nanowires. Nanowire devices are...