نتایج جستجو برای: silver oxyfluoride

تعداد نتایج: 45799  

2007
Anthony J. Midey A. A. Viggiano

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2015
Damien Dambournet Karena W Chapman Mathieu Duttine Olaf Borkiewicz Peter J Chupas Henri Groult

The mechanism of lithium insertion that occurs in an iron oxyfluoride sample with a hexagonal-tungsten-bronze (HTB)-type structure was investigated by the pair distribution function. This study reveals that upon lithiation, the HTB framework collapses to yield disordered rutile and rock salt phases followed by a conversion reaction of the fluoride phase toward lithium fluoride and nanometer-siz...

2009
A. Durán

ransparent glass-ceramics have been prepared by heat-treating oxyfluoride glasses in the Na2O–Al2O3–SiO2–LaF3 system. The nanocrystallisation f LaF3 was achieved by controlling time and temperature parameters. Glasses and glass-ceramics were characterised by dilatometry, DTA, XRD nd TEM. The mean crystal size (<20 nm) and the crystal fraction increase with the temperature of heat treatment, whi...

2016
Yoshihiro Tsujimoto Satoshi Nakano Naoki Ishimatsu Masaichiro Mizumaki Naomi Kawamura Takateru Kawakami Yoshitaka Matsushita Kazunari Yamaura

We report a novel pressure-driven spin crossover in layered cobalt oxyfluoride Sr2CoO3F with a distorted CoO5 square pyramid loosely bound with a fluoride ion. Upon increasing pressure, the spin state of the Co(III) cation gradually changes from a high spin state (S = 2) to a low spin state (S = 0) accompanied by a anomalously large volume contraction (bulk modulus, 76.8(5) GPa). The spin state...

Journal: :ACS nano 2008
Sherdeep Singh Miguel Festin Warren R T Barden Luan Xi James T Francis Peter Kruse

Ultrathin films are important nanoscale structures that are used extensively in a variety of technological contexts. However, it has traditionally been difficult and costly to fabricate detachable and purely inorganic high aspect ratio films with controlled thickness and good uniformity. Here we report a versatile method to make separable purely inorganic membranes of various metal oxides such ...

1999
R. Canteri G. W. Rubloff

The diffusion of ion implanted F in Si has been studied by the use of secondary ion mass spectroscopy and thermal desorption spectroscopy. In the dose range studied (below amorphization threshold), F exhibits an anomalous out-diffusion behavior which is characterized by the depletion of F in Si substrate at temperatures 2550 “C! with complete suppression of diffusion deeper into the bulk of Si....

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