A full computer system simulator models processors, memories and all other hardware observable by software. Implementing device models for such a simulator is time consuming and error prone. Documentation for devices tends to be less accurate than documentation for microprocessors. This master thesis presents a device model test framework, developed to make testing of such models against real h...

The mobile crane simulator is a project sponsored by Employment and Vocational Training Administration, Council of Labor Affair, Executive Yuan, Taiwan, to build a safe device for training and licensing. This paper presents the principle and mechanism to build a high-fidelity interactive visual simulator on a cluster of PCs. The implemented mobile crane simulator uses the peer-to-peer architect...

This paper presents a methodology for observing human skill by using a virtual task space constructed by the haptic virtual reality technology. First a haptic simulator developed for a 2-dimensional pegin-hole assembly operation in the virtual environment is presented. To examine the validity of the simulator, a comparison study between the peg-in-hole task using the simulator and that in the r...

In the research presented here, the aim has been to develop a haptic milling simulator for surgical training of vertebral operations. One central goal has been to create a simulator that gives the user a realistic impression of contacts with, and milling of, a virtually represented bone tissue model. A new 6 degrees-of-freedom haptic algorithm for milling is implemented together with new 6 degr...

A circuit-level electrothermal simulator, MICS (MItsubishi Circuit Simulator), is presented with parasitic bipolar transistor action and lattice heating taken into account. Diffusion capacitance in parasitic bipolar transistors is introduced to cover turn-on behavior under short rise-time current. Device temperatures are simulated from calculated electrical characteristics and the closed-form s...

In this paper, architecture independent software simulation kit for multiprocessors called ISIS is proposed and designed. It includes various small simulators of a hardware device. All functions are implemented in C++ language, and the extension of them is also easy. Execution speed of a sample simulator was measured. Execution time of the simulator with four R3000 processors is 22,000 times of...

An efficient and reliable numerical simulator for carbon nanotube field effect transistors suitable for device optimization and compact model development is presented. The simulator is based on a Schrödinger-Poisson solver and an efficient adaptive integration scheme for the charge and the current along the nanotube. While suitable error estimators for adaptive integration are studied extensive...

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anne...

(Abstract) SiC offers the potential to provide high power, high temperature electronics. Our two-dimensional is used to model the current voltage characteristics of a 6H-SiC MOSFET as a function of temperature, from 25C to 200C. (Intro) In our previous paper[1], we developed a new detailed mobility model for Silicon Carbide (SiC) MOSFETs. The new model explicitly accounts for the contribution o...