A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8...

This paper presents an efficient modeling method, based on the microstrip lines theory, for the coupling between a substrate backplane and a device contact. We derive simple closed-form formulas for rapid extraction of substrate parasitic. We use these formulas to model spiral inductors as important substrate-noise sources in mixed-signal systems. The proposed model is verified for the frequenc...

Inductors play a crucial role in signal processing, current stabilization, and suppression of electromagnetic interference, making them essential components integrated filtering circuits. However, traditional inductors suffer from limitations such as low frequency bandwidth, large size, power. Additionally, they are constrained by manufacturing barriers associated with magnetic materials. This ...

This paper presents the results of investigations on integrated inductors for a new low cost MCM-D substrate technology. The results are focused on the analysis of design options and design parameter for planar spiral inductors. Measurements on test structures were used to quantify process tolerances and inductor performance and to set up accurate models for em-simulations. Simulation results o...

Passive components for use in planar Monolithic Microwave Integrated Circuits (MMICs) based on High Electron Mobility Transistors (HEMTs) on indium phosphide substrates are presented. Design, fabrication, and modeling issues of capacitors, resistors, inductors, transmission lines, via holes, and air bridges have been addressed. Sputtered thin films have been utilized to make metal-insulator-met...

— Various model parameter calculation equations of RF CMOS inductors are compared. The calculation equations are using as variables either Y, Z-parameters or S-parameters. Results are based on on-wafer RF S-parameter measurements of a 3.75 turn spiral inductor fabricated in AMIS 0.7 μm CMOS DM1P n-well technology. Results obtained with calculation equations for a differentially driven inductor ...

The structure of the miniature three–dimensional (3-D) inductor is presented in this paper. The proposed miniature 3-D inductors have been fabricated in a standard digital 0.35m one-poly-four-metal (1P4M) CMOS process. According to the measurement results, the self-resonance frequency SR of the proposed miniature 3-D inductor is 34% higher than the conventional stacked inductor. Moreover, the p...

In this paper, an improved design of a high-Q factor CMOS active inductor operating in the mid MHz frequency range is introduced. Analysis of equations has been used to gain insight into behavior of the active inductor. Moreover, based on these equations and their analysis, ways of improving quality factor are discussed. Performance improvement based on this new design coupled with use of feedb...

Abstract — This paper presents the design, implementation and test of inductorless low noise amplifiers implemented on a BiCMOS SiGe technology. A study of LNAs with the available spiral inductors has showed that similar gain and noise figure can be obtained with smaller resistive feedback amplifiers due to the inductors low Q at 30GHz. A wide band amplifier with a 3dB bandwidth from 12 to 30GH...