We describe the development of high-T e Josephson junction devices for applications at millimeter wave frequencies. These devices consist of ramp type YBCO/PBCO/YBCO Josephson junctions that are equipped with a noble metal log-periodic antenna. Growth conditions of all layers, as well as etching, cleaning and annealing procedures are being optimized, to guarantee well-defined device properties....

The NanoStructures Laboratory (NSL) at MIT develops techniques for fabricating surface structures of integrated circuits (IC) with feature sizes in the range from nanometers to micrometers, and uses these structures in a variety of research projects. The NSL includes facilities for lithography (photo, interferometric, electron beam, ion beam, and x-ray), etching (chemical, plasma and reactive-i...

The focused ion beam (FIB)/scanning electron microscope (SEM) is a scanning microscope with an electron column and an ion column embedded in the same specimen chamber; both beams are aiming at the same point on the specimen surface. The FIB, generated by a Ga Liquid Metal Ion Source (LMIS), impacts the sample normal to the surface and can be focused to a spot as small as few nanometres. The FIB...

To properly process and reconstruct 3D ToF-SIMS data from systems such as multi-component polymers, drug delivery scaffolds, cells and tissues, it is important to understand the sputtering behavior of the sample. Modern cluster sources enable efficient and stable sputtering of many organics materials. However, not all materials sputter at the same rate and few studies have explored how differen...

The surface of human adenovirus 2 was etched by irradiating intact virions with low-energy (1-keV) Ar+ ions in a Technics Hummer V sputter coater . Viral structures exposed by the etching process were shadowed and then examined in the electron microscope. Periods of etching that were sufficient to reduce the viral diameter by 20 to 30 nm revealed distinct substructural elements in the virion co...

Transparent dielectric layers with varying compositions of TiO2 and SiO2, and ITO are deposited on sapphire and Si substrates by using an RF sputter system. Inductively coupled plasma (ICP) reactive ion etching (RIE) of the ITO hard mask is examined under H2, CH4, and Cl2 chemical environments. The slope of the sidewall and the etch residue on the sidewall of the ITO hard mask are controlled by...