HfN specimens deformed via four-point bend tests at room temperature and at 2300 °C (~0.7 Tm) showed increased plasticity response with temperature. Dynamic diffraction via transmission electron microscopy (TEM) revealed ⟨110⟩{111} as the primary slip system in both temperature regimes and ⟨110⟩{110} to be a secondary slip system activated at elevated temperature. Dislocation line lengths chang...

LiNbO3 is a ferroelectric material with a rhombohedral R3c structure at room temperature. A LiNbO3 bicrystal with a f1210g=h1010i 1 low-angle tilt grain boundary was successfully fabricated by diffusion bonding. The resultant boundary was then investigated using highresolution TEM. The boundary composed a periodic array of dislocations with b 1⁄4 1=3h1210i. They dissociated into two partial dis...

Z-shape faulted dipoles in deformed GaAs were investigated by using high resolution electron microscopy. There is no difference in the core structure of the a and b dislocations of stair-rod and 90 Shockley partials, nor in the dissociated stacking fault width. The central stacking fault is found to generate large local atomic displacements and exhibits a different structure from that of the in...

Trapping of electrons in stacking fault SF interface states may lower the energy of a SF more than it costs to form the SF. This “electronic stress” driving force for SF expansion is evaluated for single and double stacking faults in 4H-SiC in terms of a two-dimensional free-electron density of states model based on first-principles calculations. In contrast with previous work, which claimed th...

A range of ^110& symmetric tilt grain boundaries ~GB’s! are investigated in several fcc metals with simulations and high-resolution electron microscopy. Boundaries with tilt angles between 50.5° and 109.5° dissociate into two boundaries 0.6 to 1.1 nm apart. The dissociation takes place by the emission of stacking faults from one boundary that are terminated by Shockley partials at a second boun...