A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, t...

The strain-induced modifications of the orbital components of the valence-band wave functions in strained GaAs quantum wells grown on GaP substrates and strained InAs quantum wells grown on GaAs substrates are studied. The relative weight of the orbital components is analyzed by comparing the piezoreflectance and the derivative of the reflectance spectra. Depending on the localization of the wa...

Based on comprehensive calibration to experimental device characteristics, Monte Carlo simulations have been performed to assess the device performance of sub100nm Si and strained Si MOSFETs with high-κ dielectrics, with and without consideration of soft optical phonon scattering induced by the introduction of high-κ dielectrics. The impact of interface roughness scattering on the performance e...

Full–band Monte Carlo simulations are performed for n–type FinFETs as well as for unstrained–Si and strained–Si fully–depleted (FD) SOI–MOSFETs. Gate lengths of 50 nm down to 10 nm are considered, and a fixed off–current of 100 nA/μm is in each case ensured by adjusting the silicon film thickness. The FinFET shows the best scaling trend, but the strained–Si FDSOI–MOSFET always involves the larg...

We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (32 × 14 μm) island of degenerately doped siliconwith superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. Thefirst device has a highly doped silicon absorber, the second...

The fluoride content of commercially prepared strained fruit juices was assessed using a fluoride ion-specific electrode in conjunction with a reference electrode. Most of the products contained less than 0.33 gg of fluoride per ml, but six of the 18 products contained more than 0.50 gg of fluoride per ml. When used in normal quantities, the fluoride content of commercially prepared strained fr...

An accurate model for the inversion charge centroid of strained-Si on Si Ge metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simul...