− In ultra low power portable devices set towards realizing a long battery life, low energy consumption per operation is the primary design constraint. Hence, operating the circuits in weak inversion or the sub-threshold region, with the subthreshold leakage current acting as the primary computing current, turn out to be a promising solution. Though such a methodology limits the performance in ...

In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to gate length of 12 nm with Contact poly pitch (CPP) 48 is simulated. NS-TFET investigated for its electrostatics characteristics using technology computer-aided design (TCAD) simulator. The inter-band tunneling mechanism P-I-N layout has been incorporated in the nanosheet devices...

In this paper we describe the tunneling junction model effect on silicon nanowire gate-allaround field effect transistor using CMOS 45 nm technology. Tunneling effects provides better subthreshold slope, excellent drain induced barrier lowering and superior ION-IOFF ratio.This paper demonstrates the gate controlled tunneling at source of Gate-all-around field effect transistor. Low leakage curr...

While a few singular reports have demonstrated carbon nanotube (CNT) transistors with subthreshold swings (SS) close to the theoretical limit (60 mV/decade), the majority of devices have more than double the target swing. Here, we show that a low temperature lanthanum oxide dielectric is able to yield a consistently and reproducibly low SS, with an average of 73 mV/decade and a low of 63 mV/dec...

This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer Ta2O5/SiO2 were fabricated a glass substrate. An evaluation insulating film MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that dielectric significantly im...

The central device of this thesis is the transistor. It acts like a faucet, but then for electric charge. There is a connection that is called the source, just like the water company. And the charge flows into the drain. Finally there is a handle, here called the gate, to control the flow of charge. The transistor is not an ideal faucet for electrons. For example, even when the gate is closed a...

The current response to sub-terahertz radiation was studied experimentally over a wide range of temperatures for AlGaN/GaN and graphene transistors. It found that the responsivity is enhanced at low by about an order magnitude more than two orders However, increase saturates below 70–100 K. These results were explained temperature dependence charge carriers' mobility, which plays dominant role ...

We propose and present in detail the new method to enable deep submicron channel length oxide semiconductor thin‐film transistors with conventional lithographic tool large‐area substrates. Up till now we succeeded fabricating thin‐ film 60 nm performance of ~300 µA/µm at a drain bias 1.5 V, gate 2 I ON /I OFF larger than 109, subthreshold swing 100 mV/dec, turn‐on voltage about ‐0.47 V . hope t...

The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. structure not only enhances the mobility by removing influence substrate but also allows ions to accumulate on both top and bottom surface MoTe2. consequent increase in gate capacitance resulted an improved subthreshold swing (?73 mV/dec) on–off ratio (106) at room te...

In this paper, the subthreshold swing was observed when stacked high-k gate oxide used for a junctionless double (JLDG) MOSFET. For purpose, model presented using series-type potential derived from Poisson equation. The results of in paper were good agreement with two-dimensional numerical values and those other papers. Using model, variation channel length, silicon thickness, dielectric consta...