The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 Å plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using XPS. It is shown that N-Si3 bonds are dominant in the ultra-thin plasma nitrided films, and that O2=...

The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Ru...

Synthesizing phosphors with high performance is still a necessary work for phosphor-converted white light-emitting diodes (W-LEDs). In this paper, three series of CaAlSiN₃:Eu2+ (denoted as CASN:Eu2+) phosphors using Eu₂O₃, EuN and EuB₆ as raw materials respectively are fabricated by under the alloy precursor normal pressure nitridation synthesis condition. We demonstrate that CASN:Eu2+ using na...

This dissertation presents the effects of atmosphere, time, and energy input (thermal and mechanical) on the kinetics of gas-solid and solid-solid reactions in systems of dysprosium, uranium, oxygen, and nitrogen. Accordingly, Chapter Two presents a novel synthesis technique used to form DyN via a gas-solid reaction between dysprosium and nitrogen. DyN was rapidly formed through a mechanochemic...

Herein, a heterostructure of Ni 3 S 2 –Ni N was prepared by three-step synthesis procedure that consists the formation on NF, electrodeposition Ni(OH) over and nitridation in presence ammonia.

The effect of different degrees the sapphire surface nitridation process completion on AlN buffer layer morphology has been studied. It was found that ~85% crystalline phase formation promotes growth a two dimensional with smooth morphology, regardless substrate temperature and ammonia flux. In contrast, during nucleation as result weak or excessive nitridation, polycrystalline three-dimensiona...

Silicon nitride nanocrystals (NCs) have been prepared via in situ nitridation of magnesium followed by a metathesis reaction with sol-gel derived silica particles. Highly luminescent, freestanding β-Si(3)N(4) NCs with complex surface chemistry dominated by Si-H and N-H moieties were isolated upon etching with hydrofluoric acid.