The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates ...

We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured cantilevers when a high voltage is applied on the PbðZr0:52Ti0:48ÞO3 piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response. The reference frequency at which the strain-mediated Fe0:7Ga0:3 based mul...

Carbon dioxide detection is a relevant issue in many fields, and this work focuses on the use of a BaTiO(3)-CuO sputtered thin film layer in a gas sensor prototype for air quality measurements. For this, a double side sensor was fabricated, with a Pt heater on one side and the sensing layer over the electrodes on the other side. The uniformity of the temperature on the sensing layer was tested ...

MnZn ferrite thin films were deposited on p-Si substrate and used as the dielectric layer in the graphene field effect transistor for infrared and terahertz device applications. The conditions for MnZn ferrite thin film deposition were optimized before device fabrication. The infrared properties and terahertz wave modulation were studied at different gate voltage. The resistive and magnetic MnZ...

In this review, we introduce a variety of surface sensitive techniques for the study of organic thin films, and applications to organic devices. These studies include surface plasmon emission light, organic thin film transistors, combination of quartz crystal microbalance and optical waveguide spectroscopy, evaluation of alignment of liquid crystal molecules at surfaces, and biosensor applicati...

Abstract: Different thickness of Cu2S thin films were prepared by vacuum evaporation under a pressure of 10-6 torr at an evaporation rate of 3Å /sec. Cu2S has direct band gap energy and indirect band gap energy at 1.2eV and 1.8 eV respectively. This paper presents the analysis of structural and optical properties of the Cu2S thin film by X-ray diffractometer (XRD) and UV-Vis-NIR Spectrophotomet...

In this paper, some critical issues and problems in the development of TiNi thin films were discussed, including preparation and characterization considerations, residual stress and adhesion, frequency improvement, fatigue and stability, as well as functionally graded or composite thin film design. Different types of MEMS applications were reviewed and the prospects for future advances in fabri...

titanium nitride-copper (tin-cu) nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. the influence of cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. structural properties of the films were studied by x-ray diffraction pattern. topography of t...

Mixing dielectric materials in solid-thin-film deposition allows the engineering of thin films' optical constants to meet specific thin-film-device requirements, which can be significantly useful for optoelectronics devices and photonics technologies in general. In principle, by use of radio-frequency (rf) magnetron sputtering, it would be possible to mix any two, or more, materials at differen...