The Al2O3/GaN heterostructure is a crucial component of GaN-based electronic and photonic devices, the interface quality plays an important role in determining device performance. Here, using density functional theory, we confirmed that dipole formed at can be attributed to electron transfer redistribution between Al2O3 GaN. formation was by X-ray photoemission spectroscopy. induced electric fi...

A reticle is a stencil used in lithography process for forming integrated circuit (IC) on silicon substrate. It consists of thin (100 nm) coating masking metallic patterned (features) with critical dimension (CD) nanometers thicker quartz The features can be damaged by electrostatic discharge (ESD) when exposed to the environment charge and caused deformed IC eventually device difunctional. Sem...

We have studied photo-induced effects in a p-type transistor based on a [1]benzothieno[3,2-b]benzothiophene (BTBT) derivative. Repetition of blue light irradiation and electrical characterization under dark reveals that its threshold voltage gradually shifts in the positive direction as the cumulative exposure time increases. This shift is slowly reversed when the transistor is stored under dar...