Atomic layer deposition (ALD) of tin oxide (SnO2) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from 130–250 C were studied. Highly conducting SnO2 films were obtained at 200–250 Cwith the growt...