نتایج جستجو برای: tunnel fet tfet
تعداد نتایج: 38497 فیلتر نتایج به سال:
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...
Security and energy are considered as the most important parameters for designing and building a computing system nowadays. Today’s attacks target different layers of the computing system (i.e. software and hardware). Introduction of new transistor technologies to the integrated circuits design is beneficial, especially for low energy requirements. The new devices have unique features and prope...
This paper presents the design of low-dropout volt-age regulators (LDO) using nanowire tunnel field-effect tran-sistors (TFETs) and MOSFET. The devices are mod-eled lookup tables implemented with experimental measures TFETs different source compositions (Si, SiGe Ge) In order to compare designs, transistors differential amplifier in all LDOs is biased gm/ID = 8 V-1 a load 1 μA 10-pF. It shown t...
We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists two electrodes with zigzag termination that are separated by narrow gap. Fermi level is controlled common back gate. main idea on taking advantage the electronic effects smooth edge atoms and investigatinge effect applied small uniaxial tensile strain gate volta...
0038-1101/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.sse.2010.04.037 * Corresponding author. Tel.: +41 21 693 5633; fax E-mail address: [email protected] (M This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at leas...
In order to improve the energy efficiency of next generation digital systems, transistors withSubthreshold SlopeReferences Q. Zhang, W. Zhao, and A. Seabaugh, "Low-subthreshold-swing tunnel
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید