نتایج جستجو برای: tunneling effect

تعداد نتایج: 1660038  

2015
Antonio Maffucci Philippe Lambin

A new possible mechanism of signal detection in the THz range is investigated, based on the excitation of resonances due to the tunneling effect between two graphene nanoribbons. A simple detector is proposed, where two graphene nanoribbons are used to contact two copper electrodes. The terminal voltages are shown to exhibit strong resonances when the frequency of an external impinging field is...

2007
E. Nadimi R. Janisch C. Radehaus

Ab initio density functional theory and ballistic transport theory are applied to the calculation of tunneling current through ultra-thin SiO2 gate dielectrics. The Si/SiO2/Si model interface has been constructed by orienting a crystalline SiO2 (β−cristobalite) slab such that the misfit with Si (001) was minimized and no dangling bonds appear at the interface. The structure was then sandwiched ...

2003
Y. Tanaka A. A. Golubov S. Kashiwaya

Tunneling conductance in diffusive normal ~DN! metal/insulator/s-wave superconductor junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the insulating barrier. The generalized boundary condition introduced by Nazarov @Superlattices and Microstructures 25, 1221 ~1999!# is applied, where the ballistic theor...

2014
Seyed Ebrahim Hosseini M. Kamali Moghaddam

This paper presents an analytical model for the potential distribution of a p-n-i-n tunneling field effect transistor (TFET). Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. According to our knowledge, there is no analytical analysis for this structure in the literature, and t...

2000
R. H. French

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

2004
F. D. Klironomos A. T. Dorsey

We calculate the tunneling current in a quantum Hall bilayer system in the strong magnetic field limit. We model the bilayer electron system as two Wigner crystals coupled through interlayer Coulomb interactions, treated in the continuum limit. We generalized the Johansson and Kinaret (JK) model and were able to study the effect of the low energy out-of-phase magnetophonon modes produced as a r...

2003
B. Sandow W. Schirmacher

Charge transport across tunneling junctions of n-doped Ge has been investigated experimentally and theoretically. Using tunneling spectroscopy we were able to observe the density of states and the effect of the electron-electron interaction on the excitation spectrum of samples, in which hopping is the transport mechanism close to equilibrium. To analyze the data of the measurements we derive a...

2000
M. Yoshimura

Time evolution of tunneling in thermal medium is examined using the real-time semiclassical formalism previously developed. Effect of anharmonic terms in the potential well is shown to give a new mechanism of resonance enhanced tunneling. If the friction from environment is small enough, this mechanism may give a very large enhancement for the tunneling rate. The case of the asymmetric wine bot...

Journal: :Physical review letters 2015
A Matos-Abiague J Fabian

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of ...

2013
D. Nandi T. Khaire A. D. K. Finck J. P. Eisenstein L. N. Pfeiffer K. W. West

Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at νT = 1 are reported. The maximum, or critical, current for tunneling at νT = 1 is shown to be a well-defined global property of the coherent phase, insensitive to extrinsic circuit effects and the precise configuration used to measure it, but also exhibiting a surprising scaling behavior with temperatur...

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