We report experimental evidence of macroscopic quantum tunneling in antiferromagnetic particles. The zero-field maximum in the dependence of the magnetic relaxation rate on the magnetic field in ferritin has been observed. This observation provides a new insight into the origin of the nonmonotonic field dependence of the blocking temperature reported recently by Gider et al. [J. Appl. Phys. 79,...

We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state cu...

The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...

We study the phase structure of the tunneling wave packets from strong-field ionization of molecules and present a molecular quantum-trajectory Monte Carlo model to describe the laser-driven dynamics of photoelectron momentum distributions of molecules. Using our model, we reproduce and explain the alignment-dependent molecular frame photoelectron spectra of strong-field tunneling ionization of...

We have analyzed the tunneling transmission probability and electronic current density through resonant heterostructures in the presence of an external electromagnetic field. In this work, we compare two different models for a double barrier : In the first case the effect of the external field is taken into account by spatially dependent AC voltages and in the second one the electromagnetic fie...

A new possible mechanism of signal detection in the THz range is investigated, based on the excitation of resonances due to the tunneling effect between two graphene nanoribbons. A simple detector is proposed, where two graphene nanoribbons are used to contact two copper electrodes. The terminal voltages are shown to exhibit strong resonances when the frequency of an external impinging field is...

Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...

Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at νT = 1 are reported. The maximum, or critical, current for tunneling at νT = 1 is shown to be a well-defined global property of the coherent phase, insensitive to extrinsic circuit effects and the precise configuration used to measure it, but also exhibiting a surprising scaling behavior with temperatur...

An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphen...