P-channel GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) utilising a polarization induced two Dimensional Hole Gas (2DHG) operate inherently in depletion mode (D-mode). The condition for their conversion to E-mode operation is examined via analytical expressions for the threshold voltage and verified via TCAD simulations. Between the two heterostructures (i) c...

Modulation of the superconducting state possessing a C-type antiferromagnetic phase in the Nd0.35Sr0.65MnO3/YBa2Cu3O7 heterostructure is investigated, with the Nd0.35Sr0.65MnO3 thickness (t) varying from 40 to 200 nm. Both the superconducting transition temperature and the upper critical field along the c-axis decrease with increasing t; while the in-plane coherence length increases from 2.0 up...

Based on the ab initio calculations, we study electronic structure of BiTeI/MnBi2Te4 heterostructure interface composed anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and polar semiconductor trilayer BiTeI. We found significant difference in properties at different types contact between substrate overlayer. While case Te-Te forms natural expansion substrate, when Dirac cone state locat...

The development of low-cost, stable, and robust non-noble metal catalysts for water oxidation is a pivotal challenge sustainable hydrogen production through electrocatalytic splitting. Currently, such suffer from high overpotential sluggish kinetics in oxygen evolution reactions (OERs). Herein, we report "continuous" single-crystal honeycomb-like MXene/NiFePx–N-doped carbon (N...

We show that LO phonon-assisted interband tunneling in type-II intersubband laser heterostructures is more efficient for the fast depopulation of the lower lasing states than the corresponding intersubband process in type-I double quantum wells (DQW). The main peak of the electron-phonon resonance in type-II DQW corresponds to electron transitions from the lowest electron-like subband to the to...

Title Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors Author(s) Hashizume, Tamotsu; Ootomo, Shinya; Inagaki, Takanori; Hasegawa, Hideki Citation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 21(4): 18281838 Issue Date 2003-08-05 Doc URL http://hdl.handle.net/211...

In this letter, we examine the potential of a functional device that can have good transistor and stress sensor properties. The device examined is based on the use of a thin oxide with high piezoelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage or by stress. We examine the performance of two classes of heterostructures that are important semi...

We present results on CVD growth and electro-optical characterization of Ge(0.92)Sn(0.08)/Ge p-i-n heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn active layers in different LED geometries, such as double heterostructures and multi quantum wells is discussed based on electroluminescence data. Theoretical calculations by effective mass and 6 band k∙p method reve...

Herein, we report multi-element doped Type-II heterostructure assembly consists of N, S doped TiO2 and ZnO for electrochemical crystal violet dye degradation studies. Electrochemical measurements were performed on these synthesized N-S codoped TiO2/ZnO compositeheterostructured assemblies which are fabricated on Titanium (Ti) substrate. It was observed that a composite ele...