an active antenna for transmitter application in s frequency band is designed and analyzed using harmonic balance technique which is based on the nonlinear model of active devices. in this active antenna, the amplifier is integrated with the radiator which is a rectangular patch antenna. this patch antenna is analyzed employing full-wave momentum method. by applying nonlinear model of transisto...

Transistor sizing is very important for determination of the circuit performance. As a result for providing fair evaluation, an optimal size of transistor is necessary. Genetic algorithm that is capable of reduction of search problem complexity uses the transistor sizing which is originally a kind of search problem in the large multidimensional search space for energy consumption optimization. ...

A detailed analysis of the transistor chain operation in CMOS gates is presented. The chain is diminished to a transistor pair taking into account the actual operating conditions of the structure. The output waveform is obtained analytically, without linear approximations of the output voltage and for ramp inputs. The .-power transistor current model which takes into account second order effect...

An accurate and e cient method for modelling CMOS gates by a single equivalent transistor is introduced in this paper. The output waveform of a CMOS inverter is obtained by solving the circuit di€ erential equation considering only the conducting transistor of the inverter. The e€ ect of the short-circuiting transistor is incorporated as a di€ erentiation of the width of the conducting transis...

Simulation models for semiconductor elements like MOS transistors are of great interest in the eld of circuit simulation. Developing a new simulation model for a transistor is computing a set of equations governing the behaviour of the MOSFET's and the innuence of the various model parameters. Due to the complexity of expressions and to the large number of the involved parameters, the hand calc...

A modified Ebers-Moll transistor model for RF-interference analysis " in IEEE Trans.

Silicon Carbide (SiC) is an emerging technology for extreme environment electronics applications. In this paper, an analytical model for vertical DIMOS transistor structure in SiC is presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. A good agreement between the analytical model and...

A temperature prediction method of Insulated Gate Bipolar Transistor (IGBT) module based on autoregressive moving average model is proposed. Historical and current temperature datum of IGBT module is indispensable to the ARMA method, temperature time series is obtained by uniform sampling, and autoregressive (AR) model is constructed. Temperature time series prediction of IGBT module is realize...