The electronic structure and chemical bonding in the Ta 3 (-) cluster are investigated using photoelectron spectroscopy and density functional theory calculations. Photoelectron spectra are obtained for Ta 3 (-) at four photon energies: 532, 355, 266, and 193 nm. While congested spectra are observed at high electron binding energies, several low-lying electronic transitions are well resolved an...

Abstract The spin–orbit torque (SOT) resulting from a spin current generated in nonmagnetic transition metal layer offers promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, practice, materials with high SOT efficiencies are indispensable. Moreover, new need to be compatible semiconductor processing. This study introduces W–Ta and W–V alloy layer...

We describe the injection of hot electrons into an aqueous solution by use of a Ta/Ta2O5 electrode. Evidence for this process was obtained by studying the chemically irreversible reduction of N-methylpyridinium ion (NMP+, E° ) -1.37 V vs SHE). The reduction of NMP+ gives rise to a radical which undergoes rapid dimerization to produce a water-insoluble species, 1,1-tetrahydrobipyridine (TBP), th...

Crystal TaS2 nanobelt arrays were fabricated on Ta wafers by a two-step method. Field-emission measurements show that the nanobelt arrays are decent field emitters with a turn-on field of approximately 0.7 V microm(-1), a threshold field of approximately 2.1 V microm(-1), and a field enhancement factor of approximately 4.33 x 10(4).

Silicon and GaAs based devices are limited in their high-temperature applications as these materials lack high sensitivity to the temperature range above 200°C due to their small band gaps. Therefore, exploration of new materials with a high-temperature performance is necessary. Diamond-like carbon as a semiconducting material may be one of the promising candidates due to its many properties cl...

Abstract Dense (Hf, Ta, Nb, Ti, V)C- and (Ta, V, W)C-based high-entropy carbides (HEC) were produced by three different sintering techniques: gas pressure sintering/sinter–HIP at 1900 °C 100 bar Ar, vacuum 2250 0.001 as well SPS/FAST 2000 60 MPa pressure. The relative density varied from 97.9 to 100%, with SPS producing 100% dense samples both compositions. Grain size measurements showed that t...

Single crystals of caesium tantalate(V), Cs(10)Ta(29.27)O(78), were obtained as a serendipitous product in a welded tantalum ampoule by a blank reaction of CsBr and bis-muth subnitrate [Bi(5)O(OH)(9)(NO(3))(4)] with the container material. The crystal structure of the title compound is made up of a three-dimensional framework constituted by two types of layers, viz. (Ta(6)O(15))(n) and (Ta(3)O(...