In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of...

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This course gives an elementary introduction to the phase-field method and to its applications for the modeling of crystal growth. Two different interpretations of the phase-field variable are given and discussed. It can be seen as a physical order parameter that characterizes a phase transition, or as a smoothed indicator function that tracks domain boundaries. Elementary phase-field models fo...

conductivity of the sample and was measured by determining the change in the optical sampling beam polarisation due to a linear electro-optic effect in the cell. The intrinsic time resolution of this experiment is defined by the laser pulse duration. It was however a little worse than 7ps because of the poor impedance matching at the place where the sample was connected into the stripline struc...

Honeycomb-like AlPO4-11 macrostructures built of hollow tubular arrays have been directly achieved in a eutectic mixture. A time-dependent study reveals that the formation process obeys in situ epitaxial growth and phase transformation mechanisms.

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with ...

In this article two methods for improvements of (112̄2) oriented semipolar GaN grown by MOVPE on pre-structured sapphire substrates are investigated. The integration of a SiNx interlayer helps to obtain a better crystal quality. Also the overgrowth of the MOVPE samples by HVPE is a way to obtain a smoother GaN surface. A high incorporation of oxygen on (112̄2) oriented GaN compared to (0001) orie...

We report the observation of an unusual phase assembly behavior during the growth of hexagonal LuFeO(3) thin films which resulted in the formation of epitaxial Fe(3)O(4) nanolayers. The magnetite layers were up to 5 nm thick and grew under the conditions at which Fe(2)O(3) is thermodynamically stable. These Fe(3)O(4) nanolayers act as buffer layers promoting a highly epitaxial growth of the hex...

Gallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap extremely high Baliga figure merit (BFOM). The Ga2O3 based show robustness against chemical, thermal radiation environments. Unfortunately, current technology sti...