نتایج جستجو برای: voltage deviation

تعداد نتایج: 178457  

Journal: :IEICE Transactions 2007
Atsushi Iwata Takeshi Yoshida Mamoru Sasaki

Recently low-voltage and low-noise analog circuits with sub100nm CMOS devices are strongly demanded for implementing mobile digital multimedia and wireless systems. Reduction of supply voltage makes it difficult to attain a signal voltage swing, and device deviation causes large DC offset voltage and 1/f noise. This paper describes noise reduction technique for CMOS analog and RF circuits opera...

2001
V. A. DELEV A. P. KREKHOV L. KRAMER

We report experimental and theoretical results on the flexoelectric instability and crossover between flexoelectric domains and electro-convection in a hybrid aligned nematic MBBA under d.c. voltage. At threshold a spatially periodic flexoelectric deformation in the form of longitudinal domains (along the planar director) was observed. With increasing voltage the director deviation out of the i...

2013
S. Sakthivel D. Mary

Modern power system networks are operated under highly stressed conditions and there is a risk of voltage instability problems owing to increased load demand. A power system needs to be with sufficient voltage stability margin for secured operation. In this study, SVC parameters of location and size along with generator bus voltages, transformer tap settings are considered as control parameters...

2013
Shoucheng Ding Wenhui Li

The programmable logic controller (PLC) is an industrial control computer; it is the new automatic device inherited computer, automatic control technology and communication technology. System temperature signal detected by the temperature sensor. The temperature transmitter will be the temperature value converted into a voltage signal of 0-10V into PLC. PLC voltage signal setting compared to th...

2006
Bogdan F. Romanescu Sule Ozev Daniel J. Sorin

Architects and chip makers are worried about the impact of increasing CMOS process variability. This variability can impact a processor’s performance and, depending on how aggressively the design is pushed, its reliability. We perform the first quantitative analysis of the impact of process variability on an RTL-level specification of a microprocessor core. For each pipeline stage, we compute t...

Journal: :iranian journal of chemistry and chemical engineering (ijcce) 2010
rasoul yarahmadi sayed bagher mortazavi mohammad reza omidkhah hassan asilyan parvin moridi

since nox family, one of the most important causes of air pollution, is the primary source of acid rains, ozone layer depletion, and breathing disorders, mitigation of these pollutants is now a global concern. in the off-gases of internal combustion engines running with oxygen excess, non-thermal plasmas (ntps) have an oxidative potential, which results in an effective conversion of no to no2. ...

Journal: :Nano letters 2005
Eric Minoux Oliver Groening Kenneth B K Teo Sharvari H Dalal Laurent Gangloff Jean-Philippe Schnell Ludovic Hudanski Ian Y Y Bu Pascal Vincent Pierre Legagneux Gehan A J Amaratunga William I Milne

When a carbon nanotube emitter is operated at high currents (typically above 1 microA per emitter), a small voltage drop ( approximately few volts) along its length or at its contact generates a reverse/canceling electric field that causes a saturation-like deviation from the classical Fowler-Nordheim behavior with respect to the applied electric field. We present a correction to the Fowler-Nor...

2016
Ryne Raffaelle J. Mantovani S. Bailey A. Hepp

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply var...

Journal: :Microelectronics Reliability 2015
Nishad Patil Diganta Das Michael G. Pecht

In this study, a Mahalanobis distance (MD)-based anomaly detection approach has been evaluated for non-punch through (NPT) and trench field stop (FS) insulated gate bipolar transistors (IGBTs). The IGBTs were subjected to electrical–thermal stress under a resistive load until their failure. Monitored on-state collector–emitter voltage and collector–emitter currents were used as input parameters...

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