In mixed circuit simulation, the estimation of parasitic capacitances of deep-submicron MOSFETs is very important. With the continuous scaling of the devices, the extrinsic capacitance, i.e. the overlap and fringing capacitances become a growing fraction of the total gate capacitance. We found the major existing models do not predict correctly the overlap capacitance and the inner fringing capa...

Whole-cell membrane capacitance measurements are frequently used to monitor neuronal and nonneuronal secretory activity. However, unless individual fusion events can be resolved, the type of the fusing vesicles cannot be identified in these experiments. Here we apply statistical analysis of trial-to-trial variations between depolarization-induced capacitance increases of mouse adrenal chromaffi...

We have studied the capacitance effect on the oscillation characteristics and the switching characteristics of the spin torque oscillators (STOs). We found that when the external field is applied, the STO oscillation frequency exhibits various dependences on the capacitance for injected current ranging from 8 to 20 mA. The switching characteristic is featured with the emerging of the canted reg...

In the current study, stress-induced capacitance determined by direct measurement on MOSFETs was compared with that determined by indirect simulation through the delay of CMOS ring oscillators (ROs) fabricated side by side with MOSFETs. External compressive stresses were applied on 〈110〉 silicon-on-insulator (SOI) n-/p-MOSFETs with the ROs in a longitudinal configuration. The measured gate capa...

Nanoparticles have shown great potential as vehicles for the delivery of drugs, nucleic acids, and therapeutic proteins; an efficient, high-throughput screening method to analyze nanoparticle interaction with the cytomembrane would substantially improve the efficiency and accuracy of the delivery. Here, we developed a capacitance sensor array that monitored the capacitance values of nanoparticl...

High-k dielectric materials are being considered as replacement for SiO2 as the gate dielectric while retaining the low equivalent oxide thickness (EOT) required next generation metal oxide semiconductor field effect transistors (MOSFETs). In this paper, we simulate the capacitance – voltage (C-V) of n-type MOSFET devices with different high-k dielectric insulator numerically. According to the ...

In this paper, a technique for realizing a floating capacitance multiplier based on the use of dual output current conveyors and grounded capacitance is proposed. Its multiplication factor can be tuned by changing the ratio of resistors. Moreover, the circuit is easily modified to electronically tunable floating capacitance multiplier by using current controlled conveyor. Simulation results are...

In this article design and operation of a parallel-plate capacitive sensor based on the dielectric capacitance and conductance change of the gap medium is reported. The designed system was used to determine characteristics of different water liquids as a result of the capacitance variations. The air gap capacitance is measured and then by filling the gap with a liquid the capacitance is monitor...

Restoration of the epidermal barrier is a requirement for burn wound closure. A rapid, reliable, and noninvasive measure of the rate of restoration of the epidermal barrier is not readily available. To monitor the reformation of the epidermal barrier, we measured surface electrical capacitance on cultured skin substitutes (human keratinocytes and fibroblasts attached to collagen-glycosaminoglyc...