نتایج جستجو برای: aluminum oxide

تعداد نتایج: 219954  

2017
Muhammad I Qureshi Faheemuddin Patel Nadhir Al-Baghli Basim Abussaud Bassam S Tawabini Tahar Laoui

The present study reports the use of raw, iron oxide, and aluminum oxide impregnated carbon nanotubes (CNTs) for the adsorption of hexavalent chromium (Cr(VI)) ions from aqueous solution. The raw CNTs were impregnated with 1% and 10% loadings (weight %) of iron oxide and aluminum oxide nanoparticles using wet impregnation technique. The synthesized materials were characterized using scanning el...

Journal: :Physical review letters 2002
W H Rippard A C Perrella F J Albert R A Buhrman

Ballistic electron emission microscopy is used to study the formation of ultrathin tunnel barriers by the oxidization of aluminum. An O2 exposure, approximately 30 mTorr sec, forms a uniform tunnel barrier with a barrier height straight phi(b) of 1.2 eV. Greater O2 exposure does not alter straight phi(b) or the ballistic transmissivity of the oxide conduction band. Tunneling spectroscopy indica...

2000
C. Cismaru J. L. Shohet J. L. Lauer R. W. Hansen S. Ostapenko

A temporary increase in the conductivity of aluminum oxide sputter deposited on the surface of aluminum wafers was made by exposure to vacuum ultraviolet ~VUV! radiation produced by a synchrotron light source. The oxide was charged, either positively or negatively, by exposure to a nonreactive inductively coupled plasma, under typical plasma processing conditions. We show the dependence of the ...

2002
J. L. Lauer J. L. Shohet C. Cismaru R. W. Hansen M. Y. Foo T. J. Henn

A temporary increase in the conductivity of aluminum oxide sputter deposited on the surface of aluminum wafers was made by exposure to vacuum ultraviolet ~VUV! radiation produced by a synchrotron light source. The oxide was charged, either positively or negatively, by exposure to a nonreactive inductively coupled plasma, under typical plasma processing conditions. We show the dependence of the ...

2012
Meng Zhang Wei Zhou Rongsheng Chen Jacob Ho Man Wong Hoi-Sing Kwok

High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.

2011

5.1 Anodic Aluminum Oxide (AAO) Templated Nanowires Due to their small sizes and potential for controllable features, nanowires/tubes represent an attractive option for increasing the surface area of ceria-based anodes. Templated approaches are currently the most flexible routes to fabricating nanowires/tubes, as only a suitable filling method needs be developed for a particular material compos...

2012
Ajab Khan Kasi Muhammad Waseem Ashraf Jafar Khan Kasi Shahzadi Tayyaba Nitin Afzulpurkar

This paper presents the development of low cost Nano membrane fabrication system. The system is specially designed for anodic aluminum oxide membrane. This system is capable to perform the processes such as anodization and electro-polishing. The designed machine was successfully tested for ‘mild anodization’ (MA) for 48 hours and ‘hard anodization’ (HA) for 3 hours at constant 0C. The system is...

Journal: :Journal of environmental sciences 2007
Xiao-hong Guan Guang-hao Chen Chii Shang

Information on the binding of organic ligands to metal (hydr)oxide surfaces is useful for understanding the adsorption behaviour of natural organic matter on metal (hydr)oxide. In this study, benzoate and salicylate were employed as the model organic ligands and aluminum hydroxide as the metal hydroxide. The attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectra revealed tha...

2000
R. G. Bankras J. Holleman P. H. Woerlee

The demands of future CMOS devices require a new gate dielectric material with higher dielectric constant than SiO2. Aluminum oxide is one of the high-k materials and an interesting candidate. Thin Al2O3 layers have been deposited by pulsed laser deposition (PLD) from a mono-crystalline sapphire target. This deposition technique was chosen because of its flexibility and availability. Aluminum o...

1999
Z. L. Dong K. A. Khor Y. W. Gu

Functionally graded NiCoCrAlY/yttria-stabilized zirconia coatings were fabricated by plasma spraying using mechanically alloyed, plasma-spheroidized NiCoCrAlY/yttria-stabilized zirconia (YSZ) composite powders. Scanning electron microscopy (SEM) and energy dispersive X-ray spectrometry (EDS) analysis revealed that oxidation of aluminum, chromium and yttrium in the NiCoCrAlY alloy occurred in th...

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