In this work, we report, optical properties of Cd1-xSnxTe quantum dots (x= 0.05, 0.10 and 0.15) synthesized in water using thioglycolic acid (TGA) as a modifier agent. The optical characterization of the samples was performed through absorption (UV) and photoluminescence spectra (PL). A red shift absorption and fluorescent emission peaks was observed which can be related t...

This paper focuses on recent results on the optical properties of self-assembled quantum dots involving typeI InGaAs/GaAs and type-II InP/GaAs interfaces. In the first part, we focus on the InGaAs/GaAs quantum dots, that were used to study the influence of a two-dimensional electron gas on the optical emission of single quantum dots. In the second part, we present the results on type-II InP/GaA...

BACKGROUND One of the most attractive properties of quantum dots is their potential to extend the opportunities for fluorescent and multimodal imaging in vivo. The aim of the present study was to clarify whether the composition and structure of organic coating of nanoparticles are crucial for their application in vivo. METHODS We compared quantum dots coated with non-crosslinked amino-functio...

Objective(s): A large ratio of surface to volume of nanoparticles in comparison with bulk ones, will increase the cell penetration and therefore their toxicity. Materials and Methods: Chemical precipitation method was used in order to synthesis of ZnS:Ag quantum dots. Their Physical properties and characteristics were assessed by X-ray diffraction, Ultra Violet-Visible Spectrophotometer, Transm...

Related Articles All-optical tuning of the Stokes shift in PbS quantum dots Appl. Phys. Lett. 102, 071905 (2013) Long wavelength (>1.55μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals Appl. Phys. Lett. 102, 073103 (2013) Intraband optical transition in InGaAs/GaAs pyramidal quantum dots J. Appl. Phys. 113, 0643...

Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processingstructure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are ...

Related Articles Long wavelength (>1.55μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals Appl. Phys. Lett. 102, 073103 (2013) Intraband optical transition in InGaAs/GaAs pyramidal quantum dots J. Appl. Phys. 113, 064310 (2013) Development of polaron-transformed explicitly correlated full configuration interactio...

We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the photoluminescence properties is similar for quantum dots on etched nanopatterns and randomly positi...

Inducing strong coupling Quantum dots, or artificial atoms, are being pursued as prospective building blocks for quantum information processing architectures. Communication with other, distant quantum dots requires strong coupling between photons and the electronic states of the dots. Mi et al. used double quantum dots defined in silicon and embedded in a superconducting cavity to achieve such ...

Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth of InAs quantum dots and improvement of...