نتایج جستجو برای: charge carrier

تعداد نتایج: 208985  

Journal: :The Journal of Experimental Medicine 1973
Yuval Karniely Edna Mozes G. M. Shearer Michael Sela

An inverse relationship exists between the net electrical charge of immunogens and the antibodies they elicit (1). Results of an earlier study have demonstrated that the net charge phenomenon has a cellular basis, since the immune response potential of murine spleen cells to 2,4-dinitrophenyl (DNP) on a negatively charged synthetic polypeptide carrier was reduced by cell fractionation over nega...

Maryam Sartipi

A fullerene is any molecule composed entirely of carbon, in the form of a hollow sphere.Naphazoline is a sympathomimetic agent with marked alpha adrenergic activity. It is a vasoconstrictor with a rapid action in reducing swelling when applied to mucous membrane. It acts on alpha-receptors in the arterioles of the conjunctiva to produce constriction, resulting in decreased congestion. It is an ...

2006
M van Loosdrecht

Abstract. A number of time resolved optical experiments probing and controlling the spin and charge dynamics of the high mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide informatio...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2007
A Pugžlys P J Rizo K Ivanin A Slachter D Reuter A D Wieck C H van der Wal P H M van Loosdrecht

A number of time-resolved optical experiments probing and controlling the spin and charge dynamics of the high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterojunction are discussed. These include time-resolved reflectivity, luminescence, transient grating, magneto-optical Kerr effect, and electro-optical Kerr effect experiments. The optical experiments provide information on the c...

2011
F. E. Rougieux A. Cuevas

Related Articles Effect of sub-bandgap illumination on the internal electric field of CdZnTe J. Appl. Phys. 110, 073708 (2011) Effect of solvent on carrier transport in poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) studied by terahertz and infrared-ultraviolet spectroscopy APL: Org. Electron. Photonics 4, 213 (2011) Polaron effects and electric field dependence of the charge carrier...

Journal: :Physical chemistry chemical physics : PCCP 2014
Wei Hu Nan Xia Xiaojun Wu Zhenyu Li Jinlong Yang

On the basis of first-principles calculations, we demonstrate the potential application of silicene as a highly sensitive molecule sensor for NH3, NO, and NO2 molecules. NH3, NO and NO2 molecules chemically adsorb on silicene via strong chemical bonds. With distinct charge transfer from silicene to molecules, silicene and chemisorbed molecules form charge-transfer complexes. The adsorption ener...

2009
Laurent Aubouy Nolwenn Huby Lionel Hirsch Arie van der Lee Philippe Gerbier

We report a molecular engineering study on optical, structural and electrical properties of seven silole derivates aiming at enhancing the balance of charge carrier in single-layer devices. By functionalizing two hole-transporting groups, dipyridylamine or anthracene, on the silole ring, we have investigated the influence of both entity types on the hole current. We have concluded that in contr...

2014
C. Buis G. Marrakchi

Radiation detectors for medical imaging at room temperature have been developed thanks to the availability of large chlorine-doped cadmium telluride (CdTe:Cl) crystals. Microstructural defects affect the performance of CdTe:Cl radiation detectors. Advanced characterization tools, such as Ion Beam Induced Current (IBIC) measurements and chemical etching on tellurium and cadmium faces were used t...

1998
Tahui Wang Tse-En Chang Lu-Ping Chiang Chih-Hung Wang Chimoon Huang

We proposed a new measurement technique to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient. This measurement technique is based on the concept that in a MOSFET the Si surface field and thus GIDL current vary with oxide trapped charge. By monitoring the temporal evolution of GIDL current, the oxide charge trapping/detrappi...

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