This paper gives a comparative analysis of an inductorless Complementary Metal Oxide Semiconductor (CMOS) Single-ended current-mode Transimpedance Amplifier (TIA) intended for use in front-end Optical communication for wideband operation. This technique uses N similar TIAs in parallel configuration to boost the overall bandwidth as well as the transimpedance gain which is not possible with volt...

A CMOS radio-frequency power amplifier including on-chip matching networks has been designed in a 0.6m n-well triple-metal digital CMOS process, and optimized using a simulated-annealing-based custom computer-aided design tool. A compact inductor model enables the incorporation of parasitics as an integral part of the parasitic-aware design and CAD optimization; low-Q metal3 spiral inductors ar...

This paper presents a fully integrated CMOS Vband Injection-Locked Power Amplifier (ILPA) for phase and frequency modulated millimeter-Wave (mm-Wave) transmitter. At mm-Wave frequency, multi-stage PAs are usually employed to achieve enough power gain due to low power gain of CMOS transistor even though it has low power efficiency. This work investigates mm-Wave ILPA for constant envelope modula...

We propose a design methodology of a low-voltage CMOS low-noise amplifier (LNA) consisting of a common-source and a common-gate stages. We first derive equations of power gain, noise figure (NF) and input third-order intercept point (IIP3) of the two-stage LNA. A design methodology of the LNA is presented by using graphs based on analytical equations. A 1-V 5.4-GHz LNA was implemented in 0.15-μ...

the low noise amplifier is the key part for front-end device of the receiver in the GPS. A 1.8V 0.18um CMOS LNA for GPS applications has been designed. Two kinds of low noise amplifier (LNA) for single-end cascade structure and differential cascade structure respectively are presented in this paper. Cadence software is used to optimize the two circuits. It provides a series of good results in N...

This paper presents a design of the transimpedance amplifier using 0.35μm CMOS technology. In the proposed transimpedance amplifier, feedback resistor RF of conventional transimpedance amplifier has been replaced by NMOS transistor as an active feedback resistor. This circuit operates at 3.3V power supply voltage and for a photocurrent of 0.5μA.The proposed transimpedance amplifier having low n...

A 70-GHz broadband amplifier is realized in a 0.13-μm CMOS technology. By using five cascaded commonsource stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB respectively under a power consumption (PDC) of 79.5 mW. With miniaturized transformer design, the core area of the circuit is only ~ 0.05 mm. Compared with the...

A 24GHz, +14.5dBm fully-integrated power amplifier with 50Ω input and output matching is fabricated using 0.18μm CMOS transistors. To enable this, a shielded-substrate coplanar waveguide transmission line structure is used to achieve low loss and small area. The power amplifier achieves a power gain of 7dB and a maximum single-ended output power of +14.5dBm with a 3dB bandwidth of 3.1GHz, while...

This paper describes a method of extending the signal frequency bandwidth while increasing the stability of a CMOS transimpedance amplifier (TIA). The TIA consists of three inverting amplifiers in a series, and a high-pass filter plus a non-inverting amplifier that are connected to the last two inverting amplifiers stated above in parallel. The TIA is fabricated using a 0.35 μm CMOS process and...

The design of a fully differential CMOS transconductance amplifier is presented in this paper. This amplifier is to be used in the first stage of a 13-bit pipelined A/D converter, and was designed to meet the necessary specifications at a minimum level of power consumption. The amplifier presented below was based on a two-stage design of a telescopic cascode input stage followed by a common-sou...