Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the ...

Energy conservation and delay minimization are the two major goals while designing ultra-low-power digital integrated circuits at lower technology nodes. Here, silicon based carbon nanotube field effect transistor (CNTFET) has been explored as a novel material for future electronics design applications (EDA). In this paper, energy-efficient switching activity techniques have applied with propos...

The performance of carbon nanotube-based transistor is analyzed. The effect of geometrical parameters on the device performance is investigated as d tunnel. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity Our results sh...

Carbon nanotube field effect transistors (CNFETs) are being extensively studied as possible successors to Silicon MOSFETs. Implementable CNTFET circuits have operational characteristics to approach the advantage of using MVL in voltage mode. In this paper we used CNTFETs to implement the improved Gödel basic operators. This paper presents arithmetic operations, implication and multiplication in...

This paper investigates a novel design of penternary logic gates usingcarbon nanotube field effect transistors (CNTFETs). CNTFET is a suitable candidate forreplacing MOSFET with some useful properties, such as the capability of having thedesired threshold voltage by regulating the diameter of the nanotubes. Multiple-valuedlogic (MVL) such as ternary, quaternary, and penternary is a promising al...

RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in near future. Experimental proof concept that outperformed Si CMOS at 130 nm has already been achieved with a vast potential improvements. This review compiles and compares different CNT integration technologies, results as well demonstrated circuits. Moreover, it suggests approaches to enhance perfor...

We probed the charge transfer interaction between the amine-containing molecules hydrazine, polyaniline, and aminobutyl phosphonic acid and carbon nanotube field effect transistors (CNTFETs). We successfully converted p-type CNTFETs to n-type and drastically improved the device performance in both the ON- and OFF-transistor states, utilizing hydrazine as dopant. We effectively switched the tran...

As continuous geometric scaling of conventional metal oxide semiconductor field effect transistors(MOSFETs) are facing many fundamental challenges, therefore, new alternatives has to be introduced to provide high performance integrated chips. This paper gives insight on various recent innovations in device engineering for microelectronics and nanoelectronics. The recent developments are mainly ...

Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a dramatic effect on the CNTFET mobility, due to the reduced vertical dimensions of the latter. We find that for the van der Waals distance between C...