Reduction of the gate length and gate dielectric thickness in complementary metal oxide semiconductor (CMOS) transistors for higher performance and circuit density aggravates problems such as poly-silicon (poly-Si) gate depletion, high gate resistance, and dopant penetration from doped poly-Si gate. To alleviate these problems in nanoscale transistors, there is immense interest in the replaceme...

Biomimetic, entirely soft robots with animal-like behavior and integrated artificial nervous systems will open up totally new perspectives and applications. However, until now all presented studies on soft robots were limited to partly soft designs, since all designs at least needed conventional, stiff, electronics to sense, process signals and activate actuators. We present the first soft robo...

It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies ...

some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

Ground penetrating radar (GPR) was used to characterize the frequency-dependent dielectric relaxation phenomena in ordinary Portland cement (OPC) hydration in concrete changing from fresh to hardened state. The study was experimented by measuring the changes of GPR A-scan waveforms over a period of 90 days, and processed the waveforms with short-time Fourier transform (STFT) in joint time-frequ...

Using a combination of dielectric spectroscopy and atomistic computer simulation techniques, the dynamical behaviour of loosely bound cations in the stuffed-silica minerals nepheline, yoshiokaite and ß-eucryptite has been investigated. The investigation has been extended to include the feldspar minerals albite, K-feldspar and anorthite. The low-frequency dielectric properties of all of the mine...

This paper presents a model-based approach to determine dielectric constants from time domain reflectometry TDR measurement in highly conductive soils. It makes use of information contained in the TDR signal from the reflection at the surface of the soil rather than the reflection from the end of the probe. The TDR method is widely used to determine the volumetric water content of soils. Common...

We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 ...