An in-depth understanding of the growth process of single-walled carbon nanotubes is of vital importance to the control of the yield of the material and its carbon structure. Using a nickel/silica (Ni/SiOx) catalyst, we have conducted a series of growth experiments with a chemical vapor deposition (CVD) system. We find that there is a temperature threshold in the CVD process, and if the reactio...

Highly ?111?-oriented 3C-SiC coatings with a distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T ? 1250 °C ptot = 10 kPa. In contrast, similar conditions, methane (CH4) as the carbon precursor, resulted in randomly oriented cauliflower-like SiC crystallites. N...

Several kinds of chemical vapor deposition (CVD) methods have been extensively used in the semiconductor industries for bulk crystal growth, thin film deposition, and nanomaterials synthesis. In this article, we focus on microwave-excited surface wave plasma CVD (MW-SWP CVD) method growth graphene related materials. The MW-SWP system consisting waveguide, slot antenna, dielectric windows is sig...