w The dual implantation method developed for defect engineering O.W. Holland, L. Xie, B. Nelson, D.S. Zhou, J. Ž . x q Electron. Mater. 25 1996 99 uses an amorphizing implant in conjunction with high energy Si -ion implantation to inject vacancies. Following annealing of the implanted samples for 20 min at 6008C and at 8008C, the amorphous layer Ž . recrystallizes by solid-phase epitaxial growt...

Carbon nanotubes (CNTs) have been under intense investigations during the past two decades due to their unique physical and chemical properties; however, there is still no commonly accepted growth mechanism to describe the growth behavior of CNTs. Here, we propose a nano Czochralski (CZ) model which regards the catalytic growth of a CNT as a CZ process taking place on the nano scale. The main i...

The lack of p-type lithium niobate limits it serving as an active material. A series of Mo-doped and pure congruent lithium niobate crystals were grown by Czochralski method under different polarization conditions. Their dominant carrier species were characterized by holographic experiment. The results showed dominant charge carrier species may be changed from electrons to holes when lithium ni...

Related Articles Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence J. Appl. Phys. 110, 113712 (2011) About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors J. Appl. Phys. 110, 114903 (2011) Silicon nanocrystals doped with substitutional or interstitial manganese Appl. Phys. Lett. 99, 193108 (2011) Effect...

The detailed comparative analysis of luminescent and scintillation properties of the single crystalline films (SCF) of YAG:Ce garnet grown from melt-solutions based on the traditional PbO-based and novel BaO-based fluxes, and of a YAG:Ce bulk single crystal grown from the melt by the Czochralski method, was performed in this work. Using the Am (a-particle, 5.49 MeV) excitation we show that scin...

Preliminary results obtained by a code aimed to the analysis of three-dimensional (3D) instability of axisymmetric melt flows in Czochralski crucible are described. The CPU time and the computer memory necessary for the comprehensive 3D stability analysis by a second-order finite volume method are estimated. Basing on a certain experimental configuration, we give an example of the stability dia...

We report on the lattice location of Er in Si using the emission channeling technique. The angular distribution of conversion electrons emitted by the decay chain 167Tm st1y2 ­ 9.25 dd ! 167mEr s2.27 sd was monitored with a position-sensitive detector following room temperature implantation and annealing up to 950 ±C. Our experiments give direct evidence that Er is stable on tetrahedral interst...

Effects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination le...

A mathematical model that explores the basic transport phenomena in a Czochralski process, their interaction and influence on the growth of high quality oxide crystals is presented. Rare earth garnets YAG and Nd-doped YAG are considered as representative oxide materials for the purpose of modeling and numerical simulation. The model proposed is evolutionary in time, and axisymmetric in space. A...

In this paper an optimal control approach for thermal stress reduction inside a Czochralski grown single crystal is presented. Using the lateral heat flux as a control variable, an optimal control formulation for minimizing thermal stress with a given crystal shape is derived. Since thermal stress is also affected by the lateral shape of crystals during growth, the level of the stress can be re...