A (linear) nonsingular solution for the edge dislocation in the translational gauge theory of defects is presented. The stress function method is used and a modified stress function is obtained. All field quantities are globally defined and the solution agrees with the classical solution for the edge dislocation in the far field. The components of the stress, strain, distortion and displacement...

The correspondence theorem which relates the solutions of displacement boundary value problems in classical and couple stress elasticity is formulated and applied to derive the solutions for edge and screw dislocations in an infinite medium. The effects of couple stresses on the dislocation strain energy is evaluated for both types of dislocations. It is shown that within a radius of influence ...

A new approach to the description of processes of plastic defonnation is developed. Within this approach, the evolution of a dislocation ensemble is detennined by both dislocation multiplication and dislocation transfonnations with both the processes occurring against the background of elastic stresses produced by the dislocation ensemble itself. Apart from the equations of detailed balance tha...

Background: Nickel-based superalloys are usually exposed to high static or cyclic loads in non-ambient environment, so a reliable prediction of their mechanical properties, especially plastic deformation, at elevated temperature is essential for improved damage-tolerance assessment of components. Methods: In this paper, plastic deformation in a single-crystal nickel-based superalloy CMSX4 at el...

Multicrystalline silicon solar cells are an important renewable energy technology that have the potential to provide the world with much of its energy. While they are relatively inexpensive, their efficiency is limited by material defects, and in particular by dislocations. Reducing dislocation densities in multicrystalline silicon solar cells could greatly increase their efficiency while only ...

The rich order parameter of Spin Density Waves allows for an unusual object of a complex topological nature: a half-integer dislocation combined with a semi-vortex of the staggered magnetization. It becomes energetically preferable to ordinary dislocation due to enhanced Coulomb interactions in the semiconducting regime. Generation of these objects changes the narrow band noise frequency.

The heteroepitaxial growth of gallium nitride (GaN) on sapphire substrates by metal-organic chemical vapor deposition is most commonly carried out using the two-step growth process. This process involves the deposition of a thin GaN nucleation layer (NL) at a temperature of approximately 450–600 1C. The morphology of this low-temperature film after annealing is known to have a crucial effect on...