Although the Tunnel Field-Effect Transistor (TFET) is a promising device for ultra-low power CMOS technology due to the ability to reduce power supply voltage and very small off-current, there have been few reports on the control of VT for TFETs. Unfortunately, the TFET needs a different technique to adjust VT than the MOSFET because most of TFETs are assumed to use on SOI substrates. In this p...

Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu2 S) NCs through a redox reaction with iodine molecules (I2 ), which formed vacancies accompanied by a localized surface plas...

The supersymmetric formulation of t-J model is studied in this paper at the mean-field level where the δ-T phase diagram is computed. We find that slave-fermion-like spiral phase is stable at low doping concentration, and the slave-boson-like d-wave fermionic spin pairing state becomes energetically favourable when δ ≥ 0.23. An improvement in free energy using Gutzwiller's method lowers the tra...

The increase of the body's capacity to transport oxygen is a prime target for doping athletes in all endurance sports. For this pupose, blood transfusions or erythropoiesis stimulating agents (ESA), such as erythropoietin, NESP, and CERA are used. As direct detection of such manipulations is difficult, biomarkers that are connected to the haematopoietic system (haemoglobin concentration, reticu...

Recent experiments have shown that nitrogen doping enhances capacitance in carbon electrode supercapacitors. However, a detailed study of the effect of N-doping on capacitance is still lacking. In this paper, we study the doping concentration and the configuration effect on the electric double-layer (EDL) capacitance, quantum capacitance, and total capacitance. It is found that pyridinic and gr...

In this work, we investigated the use of a homogeneous Al-doped zinc oxide (AZO) buffer layer to improve the performance of an organic light-emitting diode (OLED) device fabricated on an AZO anode. For this, 10-nm-thick AZO buffer layers with Al doping concentrations of 3.1, 4.1, and 5.1 at % were grown on 140-nm-thick AZO anode films containing 2.1 at % Al by atomic layer deposition. The elect...

Polycrystalline (Cu1-xZnx)2OSeO3 (0≤x≤0.2) samples were synthesized using solid-state reaction and characterized by X-ray diffraction (XRD). The effect of Zn doping upon saturation magnetization (MS) indicates that the Zn favors to occupying Cu(II) square pyramidal crystallographic site. The AC susceptibility (χ'ac) was measured at various temperatures (χ'ac-T) and magnetic field strengths (χ'a...

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...

The amount of strain was measured in GaN "lms using X-ray di!raction, Raman, and curvature techniques as a function of "lm thickness and the Si doping concentration. It was found that for a doping concentration of 2]1019, the threshold thickness for crack formation was about 2.5 lm. Transmission electron microscopy observations showed that cracking proceeds without plastic deformation (i.e., no...