نتایج جستجو برای: doping in sports

تعداد نتایج: 16988742  

Journal: :Advanced materials 2015
Yanhao Yu Zhaodong Li Yunming Wang Shaoqin Gong Xudong Wang

Doping polymer with AlOx via sequential infiltration synthesis enables bulk modification of triboelectric polymers with tunable electric or dielectric properties, which broadens the material selection and achieves a durable performance gain of triboelectric nanogenerators.

Journal: :Physical review letters 2005
N Gedik M Langner J Orenstein S Ono Yasushi Abe Yoichi Ando

We report time-resolved measurements of the photoinduced change in reflectivity, DeltaR, in the Bi2Sr2Ca(1-y)Dy(y)Cu2O8+delta (BSCCO) system of cuprate superconductors as a function of hole concentration. We find that the kinetics of quasiparticle decay and the sign of DeltaR both change abruptly where the superconducting transition temperature T(c) is maximal. These coincident changes suggest ...

Journal: :Advanced materials 2012
Alexander Mityashin Yoann Olivier Tanguy Van Regemorter Cedric Rolin Stijn Verlaak Nicolas G Martinelli David Beljonne Jérôme Cornil Jan Genoe Paul Heremans

The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no elect...

Journal: :Physical review letters 1989
Bedrossian Meade Mortensen Chen Golovchenko Vanderbilt

Journal: :Soft matter 2016
B van der Meer L Filion M Dijkstra

Using simulations we explore the behaviour of two-dimensional colloidal (poly)crystals doped with active particles. We show that these active dopants can provide an elegant new route to removing grain boundaries in polycrystals. Specifically, we show that active dopants both generate and are attracted to defects, such as vacancies and interstitials, which leads to clustering of dopants at grain...

Journal: :Physical review letters 2010
Junyi Zhu Feng Liu G B Stringfellow Su-Huai Wei

When a semiconductor host is doped by a foreign element, it is inevitable that a volume change will occur in the doped system. This volume change depends on both the size and charge state difference between the dopant and the host element. Unlike the "common expectation" that if the host is deformed to the same size as the dopant, then the formation energy of the dopant would reach a minimum, o...

Journal: :Haematologica 2006
Michael Ashenden Emmanuelle Varlet-Marie Françoise Lasne Michel Audran

This study appraised the veracity of claims that athletes can evade doping controls by injecting microdoses of recombinant human erythropoietin (rHuEPO), which rapidly disappear from the circulation. We confirmed that microdosing can reduce the window of detection to as little as 12-18 hours post-injection, suggesting that authorities must adopt appropriate counter measures.

Journal: :Physical review letters 2005
Y Dagan M M Qazilbash R L Greene

The temperature dependence of the tunneling conductance was measured for various doping levels of Pr(2-x)CexCuO4 using planar junctions. A normal state gap is seen at all doping levels studied, x=0.11 to x=0.19. We find it to vanish above a certain temperature T*. T* is greater than T(c) for the underdoped region and it follows T(c) on the overdoped side. This behavior suggests finite pairing a...

Journal: :Physical review letters 2008
J Y Zhu Feng Liu G B Stringfellow

Surfactant effects are usually achieved by the addition of a single surface element. We demonstrate by first-principles calculations a dual-surfactant effect of Sb and H on enhancing Zn doping in organometallic vapor phase epitaxially grown GaP thin films. The combined effects of Sb and H lower significantly the doping energy of Zn in GaP, while neither Sb nor H can function alone as an effecti...

Journal: :Physical review. B, Condensed matter 1996
Soo Huang Ming Kao Munekata Chang

Local structures around Mn in In12xMnxAs films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure ~EXAFS! technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures ~near 200 °C! or with a low Mn concentration ~about 1 at. %!. This result represents a significant extension of an e...

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