Expressions for the “quantum capacitance” are derived, and regimes are discussed in which this concept may be useful in modeling electronic devices. The degree of quantization is discussed for oneand two-dimensional systems, and it is found that two-dimensional (2D) metals and one-dimensional (1D) metallic carbon nanotubes have a truly quantized capacitance over a restricted bias range. For bot...

the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...

Subthreshold VLSI circuits design received ample interest due to rapid growth of portable devices. The portable domain places in flexible limitation on the power dissipation. Though, device operating in subthreshold region shows huge potential towards satisfying the ultra low power requirement, it holds lots of difficult design issues. As integration density of interconnects increases at every ...