Related Articles Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid microring resonators Appl. Phys. Lett. 102, 051106 (2013) Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect Appl. Phys. Lett. 102, 053506 (2013) Programmable ZnO nanowire transistors using switchable polarizat...

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown tha...

Related Articles Switching quantum transport in a three donors silicon fin-field effect transistor Appl. Phys. Lett. 99, 242102 (2011) Contact effects in high performance fully printed p-channel organic thin film transistors APL: Org. Electron. Photonics 4, 271 (2011) High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer APL: Org. Electron. Photonics 4, 27...

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to mul...

Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...