نتایج جستجو برای: electron field diode

تعداد نتایج: 1079656  

2012
Alexander E. Hramov Alexey A. Koronovskii Vladimir A. Maximenko Olga I. Moskalenko

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Journal: :Acta oncologica 2010
Tobias Schmitz Matthias Blaickner Christian Schütz Norbert Wiehl Jens V Kratz Niels Bassler Michael H Holzscheiter Hugo Palmans Peter Sharpe Gerd Otto Gabriele Hampel

To establish Boron Neutron Capture Therapy (BNCT) for non-resectable liver metastases and for in vitro experiments at the TRIGA Mark II reactor at the University of Mainz, Germany, it is necessary to have a reliable dose monitoring system. The in vitro experiments are used to determine the relative biological effectiveness (RBE) of liver and cancer cells in our mixed neutron and gamma field. We...

Journal: :iranian journal of medical physics 0
mohamad javad tahmasebi-birgani department of medical physics, jundishapuruniversity of medical sciences, ahvaz, iran mohamad reza bayatiani radiotherapy and medical physics department of arak university of medical sciences&khansari hospital, arak, iran fatemeh seif radiotherapy and medical physics department of arak university of medical sciences&khansari hospital, arak, iran mansur zabihzadeh department of medical physics, jundishapuruniversity of medical sciences, ahvaz, iran hojatolah shahbazian department of medical physics, jundishapuruniversity of medical sciences, ahvaz, iran

introduction magnetic fields are capable of altering the trajectory of electron beams andcan be used in radiation therapy.theaim of this study was to produce regions with dose enhancement and reduction in the medium. materials and methods the ndfeb permanent magnets were arranged on the electron applicator in several configurations. then, after the passage of the electron beams (9 and 15 mev va...

2008
K. Takatani T. Nozawa T. Oka H. Kawamura K. Sakuno

Abstract The fabrication and I-V characteristics of the novel AlGaN/GaN field effect diode are reported. This diode has a distinguishing anode structure and the relatively thick AlGaN barrier layer in contrast a conventional field-effect Schottky barrier diode (FESBD). By using fluoride-based plasma treatment, we could reduce its turn-on voltage to 0 V and decrease its leakage current at the re...

Journal: :CoRR 2006
A. Phommahaxay Gaëlle Lissorgues L. Rousseau Tarik Bourouina P. Nicole

Advances in material processing such as silicon micromachining are opening the way to vacuum microelectronics. Two-dimensional vacuum components can be fabricated using the microsystems processes. We developed such devices using a single metal layer and silicon micromachining by DRIE. The latter technological step has significant impact on the characteristics of the vacuum components. This pape...

2000
X. R. Zhu

Silicon diode dosimeters have been used routinely for in-vivo dosimetry. Despite their popularity, an appropriate implementation of an in-vivo dosimetry program using diode detectors remains a challenge for clinical physicists. One common approach is to relate the diode readout to the entrance dose, that is, dose to the reference depth of maximum dose such as d(max) for the 10x10 cm(2) field. V...

Journal: :Physical review letters 2007
Christian Flindt Anders S Sørensen Mikhail D Lukin Jacob M Taylor

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of the diode bias and local gating allow for the generation of single photons that are entangled with a ...

2005
G. A. Gibson R. Bicknell B. S Yeh J. Chen H. Liao S. Subramanian

An ultrahigh-density electron-beam-based data storage medium is described that consists of a diode formed by growing an InSe/GaSe phase-change bilayer film epitaxially on silicon. Bits are recorded as amorphous regions in the InSe layer and are detected via the current induced in the diode by a scanned electron beam. This signal current is modulated by differences in the electrical properties o...

2011
Nasir Alimardani E. William Cowell John F. Wager John F. Conley David R. Evans Matthew Chin Stephen J. Kilpatrick Madan Dubey

Metal-insulator-metal (MIM) tunnel diodes on a variety of high and low work function metals with various levels of root-mean-square roughness are fabricated using high quality atomic layer deposited Al2O3 as the insulating tunnel barrier. It is found that electrode surface roughness can dominate the current versus voltage characteristics of MIM diodes, even overwhelming the impact of metal work...

Journal: :iranian journal of medical physics 0
zahra anjomani m.sc. in medical physics, nuclear engineering dept., shahid beheshti university, tehran, iran hasan nedaie assistant professor, radiotherapy physics dept., tehran university of medical science, tehran, iran majid shariari associate professor, nuclear engineering dept, shahid beheshti university, tehran, iran

introduction: nowadays new radiochromic films have an essential role in radiotherapy dosimetry. properties such as high sensitivity, good reproducibility, high spatial resolution, easy readout and portability have made them attractive for dosimetry, especially in high-dose-gradient regions. material and methods: in this study, electron-beam dose distributions in homogenous and heterogeneous pha...

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