We have studied the bound states of the extra electron in a molecular chain corresponding to the physical situation of the electron tunneling through the system. The bound-state spectrum is obtained using the formalism of the multiple scattering theory MST . The subbarrier scattering operators, the fundamental building blocks of MST, are evaluated within the variational asymptotic method which ...

With available high resolution structures of PSII and a collection of reported redox midpoint potentials for most of the cofactors, it is possible to compare the expected electron tunneling rates with experimental rates to determine which electron transfer reactions are likely to reflect simply engineered electron tunneling, and which are more sophisticated and associated with large product rea...

Recent experimental advances in scanning tunneling microscopy make the measurement of the conductance spectra of isolated and magnetically coupled atoms on nonmagnetic substrates possible. Notably, these spectra are characterized by a competition between the Kondo effect and spin-flip inelastic electron tunneling. In particular they include Kondo resonances and a logarithmic enhancement of the ...

Recent experimental advances in scanning tunneling microscopy make the measurement of the conductance spectra of isolated and magnetically coupled atoms on nonmagnetic substrates possible. Notably these spectra are characterized by a competition between the Kondo effect and spin-flip inelastic electron tunneling. In particular they include Kondo resonances and a logarithmic enhancement of the c...

Single electron tunneling into small superconducting islands is sensitive to the gap energy of the excitations created in the process and, hence, depends on the electron number parity. At low temperature the properties of the system are 2e-periodic in the applied gate voltage, turning e-periodic at higher temperature. We evaluate the tunneling rates and determine the probabilities for the even ...

We compare the numerical results for electron tunneling currents for single gate oxides, ON-and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and the modeling of electron transport in silicon.

Our objective is to study resonant tunneling of an electron in the presence of inelastic scattering by optical phonons. Using a recently developed technique, based on exact mapping of a many-body problem onto a one-body problem, we compute transmission through a single site at finite temperatures. We also compute current through a single site at finite temperatures and an arbitrary strength of ...

The authors have studied adsorption of acetylene on Cu͑110͒ by means of low-temperature scanning tunneling microscopy. Adsorbed molecules preferentially aggregate at 40 K to yield dimer, trimer, and larger islands on the surface. Isolated species ͑monomer͒ adsorbs on the fourfold hollow site with ϳsp 3 rehybridization as characterized by inelastic electron tunneling spectroscopy. Tunneling electron...

An analytical expression for the electron tunneling time has been derived for symmetrical rectangular double-barrier structures. It gives values of the tunneling time equal to those calculated by the dwell time method for the resonant tunneling state. The obtained tunneling time is given by the sum of the time connected with the barrier layer width and the time connected with the well layer wid...