نتایج جستجو برای: epitaxial
تعداد نتایج: 9450 فیلتر نتایج به سال:
Data are presented demonstrating a low thermal resistance lithographic laser. An 8 mm vertical-cavity surface emitting laser defined using lithography and epitaxial crystal growth provides output power of 14 mW, slope efficiency of 0.88 W/A corresponding to differential quantum efficiency of 70% and power conversion efficiency of 26%. Low thermal resistance, even without heatsinking, results in...
In order to calculate the redis tr ibut ion of boron in silicon by both diffusion and autodoping dur ing epitaxial growth, certain materials parameters must be known as a function of temperature. The parameters are the diffusion coefficient of boron, the evaporat ion coefficient of boron from silicon, and the silicon evaporation rate in a hydrogen ambient. The value of the diffusion coefficient...
We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitr...
It is commonly accepted that properties of epitaxial graphene (EG) grown on SiC are determined by interaction with substrate. It was found, that hydrogen intercalation of EG grown on SiC(0001) substrates by sublimation is a promising method to increase the mobility of carriers [1]. As verified by Raman spectroscopy [2] sublimation grown samples show much stronger interaction with the SiC substr...
InGaAsN and GaAsN epitaxial layers with similar nitrogen compositions in a sample were successfully grown on a GaAs (001) substrate by solid source molecular beam epitaxy. An electron cyclotron resonance nitrogen plasma source has been used to generate atomic nitrogen during the growth of the nitride layers. The indium composition changed from sample to sample to give compressive and tensile st...
Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal...
Pulsed laser deposition was used to grow epitaxial p-FeSis films on Si(ll1) (1X1) and Si(ll1) (7X7) with the following epitaxial orientations: P-FeSi2(OOl)//Si(lll) with @-FeSi~OlO]//Si(llO) and three rotational variants’silicide growth was influenced by substrate temperature and deposition rate, but not by the structure of the starting surface. Films containing both P-FeSia and FeSi were forme...
Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAsr-,P, buffer. The lattice mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electronspin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial layer thicknesses varying from 0.1 p...
The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید