نتایج جستجو برای: function negf formalism

تعداد نتایج: 1242621  

Journal: :Nucleation and Atmospheric Aerosols 2021

In last few years, graphene nanoribbon based sensorshave challenging research significance due to large surface -to-volume ratio of and also high sensitivity fast response towards toxic gases[1].Carbon monoxide (CO) is one the dangerousgas released from factories vehicle emissions[2].In present research, Non-Equilibrium Green's function (NEGF) formalism Density Functional Theory (DFT) are used ...

M Jafari

In this paper, we study the plasmonic thermal conductance of ordered stacks of metallic nanorings in a host material. Using second quantized formalism of the Random Phase Approximation, we first determine the dispersion relations of surface plasmon waves on the stacks of nanorings. Then, using Landauer-Buttiker formalism, we determine the coefficient of plasmonic thermal conductance and heat cu...

Journal: :Physical review 2023

The HF-GKBA offers an approximate numerical procedure for propagating the two-time non-equilibrium Green's function(NEGF). Here we compare to exact results a variety of systems with long and short-range interactions, different two-body interaction strengths various preparations. We find excellent agreement between time evolution in models when more realistic long-range exponentially decaying in...

Journal: :Physical review applied 2021

Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics biosensing applications well domain q-bits based information processing. Such QDs suitable several novel device their unique property confining carriers 3-dimensionally creating discrete states. However, realization ...

Journal: :IEEE Transactions on Electron Devices 2022

This work studies the diameter scaling behavior of broken-band GaSb/InAs vertical nanowire (VNW) Esaki diodes. A top-down fabrication process involving precise reactive-ion etching and alcohol-based digital etch has yielded devices with a tunneling junction below 10 nm. Clear peaks are observed an average peak current density 1MA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlin...

Journal: :Frontiers of Physics in China 2021

With the rapidly increasing integration density and power in nanoscale electronic devices, thermal management concerning heat generation energy harvesting becomes quite crucial. Since phonon is major carrier semiconductors, transport due to phonons mesoscopic systems has attracted much attention. In quantum studies, nonequilibrium Green’s function (NEGF) method a versatile powerful tool that be...

Ali Maghari, Reza Islampour

The electronic absorption spectral line shape of a diatomic molecule with harmonic potential curves is calculated using the time correlation function formalism. Both the equilibrium shift and the frequency shift of the two linking electronic states ate taken into account. The spectrum is also calculated using the cumulated expansion which is related to the correlation function of the time-d...

2009
J. Wan M. Cahay P. Debray R. Newrock

A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between opposite edges of the channel. This triggers a spontaneous spin polarization, which is signific...

2007
A. R. Brown A. Martinez M. Bescond A. Asenov

As device dimensions shrink to the order of nanometres, quantum effects such as confinement and tunnelling start to play a significant role. Quantum confinement shifts the threshold voltage, and the leakage increases due to band-toband, source-to-drain and gate tunnelling. Such effects will have a strong impact on the performance of nanowire transistors actively researched at present as a possi...

Journal: :Microelectronics Reliability 2013
Narjes Moghadam Mohammad Kazem Moravvej-Farshi Mohammad Reza Aziziyan

We propose a new Metal-oxide-semiconductor carbon-nanotube transistor (MOSCNT) in which source (S) and drain (D) regions are formed by band engineered multi-wall carbon nanotubes (BE-MWCNTs). The gradual potential profiles of these band-engineered S/D regions weakening the longitudinal confinements in the channel reduce the band-to-band tunneling significantly and hence eliminating the ambipola...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید