نتایج جستجو برای: gate transistor

تعداد نتایج: 56440  

Journal: :Nanotechnology 2016
I Zeimpekis K Sun C Hu N M J Ditshego O Thomas M R R de Planque H M H Chong H Morgan P Ashburn

We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH(-1) is obtained in the subthreshold region when t...

Journal: :journal of nanostructures 2013
n. manavizadeh f. raissi e. asl-soleimani

the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...

Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three diffe...

2015
Seema Verma Pooja Srivastava Nupur Srivastava

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه پیام نور - دانشکده علوم پایه 1387

چکیده ندارد.

Journal: :Biophysical journal 2007
Janosch Lichtenberger Peter Fromherz

The release of dense-core vesicles in bovine chromaffin cells is a model for the presynaptic process in neurons. It is usually studied by microamperometry of catecholamines with carbon fibers. Here we introduce transistor recording as a tool to study vesicle release. When we stimulate a chromaffin cell placed on a field-effect transistor, the gate voltage exhibits peaks that correlate with a si...

Journal: :Analytical chemistry 2014
Carlos Duarte-Guevara Fei-Lung Lai Chun-Wen Cheng Bobby Reddy Eric Salm Vikhram Swaminathan Ying-Kit Tsui Hsiao Chin Tuan Alex Kalnitsky Yi-Shao Liu Rashid Bashir

The adaptation of semiconductor technologies for biological applications may lead to a new era of inexpensive, sensitive, and portable diagnostics. At the core of these developing technologies is the ion-sensitive field-effect transistor (ISFET), a biochemical to electrical transducer with seamless integration to electronic systems. We present a novel structure for a true dual-gated ISFET that ...

Abstract: We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the 5nm FinFET. The improvement of drivecurrent is one of the most important issues in ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه سیستان و بلوچستان - دانشکده مهندسی برق و کامپیوتر 1391

this thesis is presented 10 ghz voltage controlled ring oscillator for high speed application. the voltage controlled ring oscillator was designed and fabricated in 0.13یm cmos technology. the oscillator is 7-stages ring oscillator with one inverter replaced by nand-gate for shutting down in the ring oscillator during idle mode. tri-state inverter was used to control of 126 bit vector in ri...

2002
A. J. MOUTHAAN

A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is saturated. d.c. and dynamic analysis of BIL-gate behaviour are given. A minimum gate delay of well belo...

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