This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulat...

A detailed study of the performance of monolithically integrated photoreceivers based on metal-semiconductormetal (MSM) photodetectors (PD’s) and HEMT’s is undertaken. Two different stacked-layer approaches to integrating MSM–PD’s with HEMT’s are investigated, and the performance of detectors and HEMT’s for each approach is compared. The structure with the MSM layers grown on top of the HEMT la...

Wide bandgap devices such as AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on silicon carbide (SiC) substrate are investigated. Low frequency noise (LFN) measurements have been carried out to evaluate the structural perfection of dual gated HEMT devices featuring 0.25x2x75μm2 gate area: generation-recombination (GR) processes are evidenced. Two sets of GRbulges related respectively ...

A key aspect of MMIC technology development and production is reliability. At Northrop Grumman Space Technology (NGST), reliability assessment and improvement are incorporated into the formative stages of technology development and continue through process qualification and manufacturing. Key components of this approach include: multi-temperature accelerated life testing; other accelerated life...

• Quantitative scanning thermal microscopy in PeakForce tapping mode on GaN/SiC HEMT. Transient response of a nanothermocouple probe. Thermal time constant extraction Pixel-by-pixel calibration probe verified by Raman thermography. Elimination temperature artefacts microscopy. We investigate the accuracy and reliability mapping using (SThM) contact example GaN-on-SiC high electron mobility tran...

0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.07.003 * Corresponding author. Tel.: +1 617 253 4764; fax E-mail address: [email protected] (J.A. del Alamo). This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that el...

This paper describes cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. At 15 K the twostage InP-based amplifier has a gain of 28+/-2 dB dB and a noise temperature below 5 K. For a narrower band of 2-4 GHz at 15 K the measured gain is 30.0+/-0.8 dB and noise temperature is 1.5 K. The total DC power consumption of the amplifier is 6.8 mW. A lattice matched stru...

Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...

We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30 nm, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the ...

Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...