Since its first technology qualification in 1996 in IBM’s Advanced Semiconductor Technology Center (ASTC), Hopewell Junction, NY, silicon germanium (SiGe) has become the darling of the chip world, with new product and development agreement announcements made on nearly a daily basis. In this paper, we update progress made in SiGe since our 1Q97 IBM MicroNews article [1], tracing a number of busi...

The recent introduction of silicon-germanium (SiGe) alloys has proven exceptionally promising for achieving excellent bipolar transistor performance at cryogenic temperatures, while maintaining the cost and yield advantages traditionally associated with silicon (Si) manufacturing. In this paper we review the features of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) which make...

Current driven instabilities in the collector of III–V heterojunction bipolar transistors ~HBT! are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred-electron ~Gunn–Hilsum! effect. Influence of the Kirk effect as well as conditions for oscillation are discussed. © 1995 American Institute of Phy...

In this article, we introduce novel transmission line standards for on-wafer thru-reflect-line (TRL) calibration employing a meandering architecture, which aims to keep the interprobe distance constant and avoid any probe separation during measurement process, yet establishing required signal path length between ports. Measurements will be performed up 500 GHz on passive de-embedding structures...

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter contains five stages, and bias circuits are used in the matching network to obtain stable high gain range. measurement results demonstrate peak of 19.5 dB at 146 GHz 3 bandwidth 56–161 (relative 96.8%). saturation output power achieves 5.9 6....