Herein, we report the fabrication of a novel heterojunction field-effect transistor (HJFET) based on two-dimensional graphene (Gr), molybdenum diselenide (MoSe2), and black phosphorus (BP) that is shielded using hexagonal boron nitride to prevent device degradation. We perform electrical optoelectronic characterizations Gr/n-MoSe2 Gr/n-MoSe2/p-BP heterojunctions. Heterojunction n-MoSe2/p-BP exh...

A density functional theory approach is employed to investigate poly-3-hexylthiophene (P3HT) interfaced with both a semiconducting and metallic carbon nanotube (CNT). For the semiconducting CNT, a type-II heterojunction can form, making such an interface desirable as a photovoltaic heterojunction. In contrast, with the metallic CNT, substantial charge redistribution occurs and the interaction i...

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A low-temperature (LT) grown InAs epi-layer has been applied as the gate to the dual-material structure of lattice-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier utilises the strong thermal stability of the InAs=InGaP heterojunction and t...

Interest in the integration of graphene and semiconductor nanowires (NWs) increased dramatically during last two decades along with overwhelming development technology. The possibility combining countless properties singular optical behavior NWs leads way to design unique photonic nanodevices. In this work, response Si/SiGe axially heterostructured deposited over a monolayer is investigated. re...

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were ...

We use hybrid density functional calculations to find that the monolayer silicane (SiH) and the anatase TiO2(101) composite (i.e. the SiH/TiO2 heterojunction) is a promising TiO2-based photocatalyst under visible light. The band gap of the SiH/TiO2(101) heterojunction is 2.082 eV, which is an ideal material for the visible-light photoexcitation of electron-hole pairs. Furthermore, the SiH/TiO2(...

We present a numerical model in which the thermionic and tunneling mechanisms across an abrupt heterojunction interface are taken into account on the basis of the one dimensional drift-diffusion formulation. We use an expression of thermionic-field emission current formulated based on the WKB approximation as a boundary condition at the abrupt heterointerface which eventually limits the current...

Pure aluminum oxide (Al2O3) and zinc aluminum oxide (Zn x Al1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al2O3/Zn0.8Al0.2O heterojunction were investigated in detail using char...