In this paper, kink effect observed in the output characteristics of AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting Si-substrate to positive/negative bias stress has been studied. The charge distribution different buffer layers wafer presence substrate-bias discussed detail. It is concluded that induced due trapping/de-trapping carriers through acceptor-like deep leve...

The variation of minority electron mobility with doping density in p+-GaAs has been measured with the zero-field time-of-flight technique. The results from a series of nine GaAs films doped between 1 X lOI and 8 X 10” cmm3 show the mobility decreasing from 1950 cm2 V-’ s-l at 1 X 10” cmm3 to 1370 cm2 V-l s-l at 9X 10” cmB3. For the doping range 9 x 1018-8x 1019 cme3, the decreasing trend in mob...

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photolumine...

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 for the first time. The strained Si channels were sandwiched between Sio.7Geo.3 layers, which, in turn, were deposited on Sio.7Geo.3 virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was comp...

IO N With a high mobility ( > 10 cm 2 V − 1 s − 1 ) and a low threshold voltage ( < 5 V) in low-temperature processes, transparent oxide semiconductor thin-fi lm transistors (TOS TFTs) have drawn considerable attention due to their applications on fl exible displays, level shifters, drivers, and pixel-driving circuits for activematrix organic light-emitting-diode (AMOLED) displays. [ 1 − 3 ] In...