Light-Emitting Diodes and Defects affect the performance of an optoelectronic device in fundamental ways. Dong-Soo Shin Jong-In Shim (article number 2200042) demonstrate how macroscopic characterization can be utilized to obtain information on microscopic defects active region light-emitting diode. They successfully show that parameters such as ideality factor S-parameter are correlated with in...

The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by current­voltage (I­V), capacitance­voltage­frequency (C­V­f ) and conductance­voltage­frequency (G­V­f ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (I­V)/0.79 eV (C­V) and 1.24, respectively. As well, t...

The influence of premetallization surface preparation on the structural, chemical, and electrical properties of Au– nGaN interfaces has been investigated by x-ray photoemission spectroscopy ~XPS!, current-voltage measurement (I-V) and cross-section transmission electron microscopy ~TEM!. XPS analysis showed that the three GaN substrate treatments investigated i.e., ex situ hydrofluoric acid etc...

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on 12 ? m thick epitaxial layer grown by halide vapor phase epitaxy ? -Ga 2 O 3 (001) substrate. The MOSSBDs, measuring 1.7 × mm , exhibited of A (70 cm ?2 ) at V voltage 5.7 10 –10 ?1.2 kV reverse (on/off ratio > 9 an ideality factor 1.05 wafer-leve...

We fabricated and studied the electrical and photovoltaic properties of organic solar cell based on poly (3hexylthiophene) (P3HT) as an electron donor blended with the acceptor [6, 6]-Phenyl C61-Butyric Acid 3Ethylthiophene Ester (modified fullerene). The active layer composed of (3:1, w/w) mixture of P3HT and the modified fullerene was sandwiched between indium tin oxide (ITO) and aluminum (Al...