Abstract We investigate the magnetic ground state of rhombohedral chromium sulphide Cr 2 S 3 by density functional theory. identify muon implantation sites, their hyperfine couplings and role charge states in this compound. Our calculations show that we can obtain a compensated ferrimagnetic state. find strong electronic correlations are required to correctly semiconducting band behaviour agree...

SAE 1020 is a widely used plain carbon steel, as mortar reinforcement in buildings and small machine parts. But aside from good mechanical properties, its surface suffer from severe corrosion and high wear rate, due to modest hardness. Chromium (Cr) in excess of 12% in Fe alloys renders them resistant to several corrosive attacks. So we tried to introduce Cr in such amounts into the surface of ...

We report recent results in an investigation of source mechanisms for the origin of Na atoms in tenuous planetary atmospheres, focusing on non-thermal processes. Experiments include photon stimulated desorption (PSD), electron stimulated desorption (ESD), and ion sputtering of Na atoms from the surface of a lunar basalt sample. Bombardment of the sodium covered surface by 3 keV Ar+ ions removes...

Abstract I introduce the implantation argument, a new argument for existence of God. Spatiotemporal extensions believed to exist outside mind, composing an external physical reality, cannot be composed either atomlessness (infinite divisibility, atomless gunk), or Democritean atoms (extended simples), and therefore inner experience reality containing spatiotemporal mind does not represent (inne...

Fabrication of sub-micron silicon integrated circuits (IC’s) requires ultra-shallow, high-dose ion implantation of dopant atoms, e.g., boron, followed by a rapid, high-temperature anneal. Since the implantation process damages the crystal lattice structure, the anneal is expected to repair this damage and react the implanted B atoms into Si lattice sites while minimizing inward diffusion of the...

P-type doping in selected areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) are investigated to improve the performance vertical GaN power devices. UHPA allows a high-temperature process without decomposition surface virtually complete activation implanted Mg ions GaN. In present paper, we provide an overview recent challeng...

Background: A prerequisite for successful embryo implantation is adequate preparation of receptive endometrium and the establishment and maintenance of a viable embryo. The success of implantation further relies upon a two-way dialogue between the embryo and uterus. However, molecular bases of these preimplantation and implantation processes in humans are not well known. Materials and Methods: ...

We report the detection of individual emitters in silicon belonging to seven different families optically-active point defects. These fluorescent centers are created by carbon implantation a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over [1.1,1.55]-$\mu$m range, spanning O- and C-telecom bands. analyse their photolumi...

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The lattice location of rare earth Er in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope Tm at doses of 1.3−2.8×10 cm and annealing up to 900°C, the angular distribution of conversion electrons emitted by the radioactive isotope Er was measured by a position-sensitive electron det...