This new approach is based on a determination of analytic expressions of the non liner inductances deduced by a new analytic fitting of the nonlinear B-H curve. We have validate this new approach using the high voltage circuit of the power supply for magnetrons simulated by MATLAB-SIMULINK® code at the nominal state using the ferromagnetic material SF19. The comparison between experimental and ...

This paper presents a new and precise mo del for different kinds of eccentric rotor of rotating machines based on polar signals concepts. Eccentricity faults in each static, dynamic and mixed cases cause that the non-uniform air-gap of machine be established. The applied model using polar signals for eccentric rotors have removed the usage approximations in two recent decays. Eccentricity coeff...

The ability to switch the coupling between quantum bits (qubits) on and off is essential for implementing many quantum-computing algorithms. We demonstrated such control with two flux qubits coupled together through their mutual inductances and through the dc superconducting quantum interference device (SQUID) that reads out their magnetic flux states. A bias current applied to the SQUID in the...

Multichannel SQUID magnetometers are being developed for signal-field mapping in biomagnetic experiments. A problem that becomes more serious as the number of channels is increased is the crosstalk caused by the mutual inductances between the individual sensing coils. A simple and effective method for eliminating this crosstalk is presented in this Paper. The method is based on a rearrangement ...

The developed subdomain model accounting for tooth-tips can accurately predict the open-circuit, armature reaction and on-load field distributions in surface-mounted permanent magnet machines. Based on this field model, their electromagnetic performance of the machine, such as the cogging torque, back-EMF and electromagnetic torque, and winding inductances are calculated. The model can also be ...

A high power wideband feedback amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers the frequency range of DC to 5GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At midband frequency, power added efficiency (PAE) of 20 % and saturation power level of 29.5 dBm were obtai...